MJ11028 ON Semiconductor, MJ11028 Datasheet

MJ11028

Manufacturer Part Number

MJ11028

Description

Darlington Transistors 50A 60V Bipolar

Manufacturer

ON Semiconductor

Datasheet

1.MJ11029.pdf (4 pages)

Specifications of MJ11028

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Package / Case

TO-204-2 (TO-3)

Collector- Emitter Voltage Vceo Max

60 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

60 V

Maximum Dc Collector Current

50 A

Power Dissipation

0.3 W

Maximum Operating Temperature

+ 200 C

Continuous Collector Current

50 A

Dc Collector/base Gain Hfe Min

400, 1000

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJ11028

Manufacturer:

MOTOROLA/摩托罗拉

Quantity:

20 000

Current page: 1 of 4
Download datasheet (117Kb)

Î Î Î Î Î Î Î Î Î Î Î Î

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High-Current

Complementary Silicon

Power Transistors

as output devices in complementary general purpose amplifier

applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

September, 2008 − Rev. 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Base Current − Continuous

Total Power Dissipation @ T

Derate Above 25°C @ T

Operating and Storage Junction

Temperature Range

Maximum Lead Temperature for

Soldering Purposes for v 10 seconds

Thermal Resistance, Junction−to−Case

Collector Current − Continuous

High−Current Complementary Silicon Power Transistors are for use

High DC Current Gain − h

Curves to 100 A (Pulsed)

Diode Protection to Rated I

Monolithic Construction with Built−In Base−Emitter Shunt Resistor

Junction Temperature to + 200_C

Pb−Free Packages are Available*

Characteristic

Rating

− Peak (Note 1)

= 100_C

= 25°C unless otherwise noted)

= 25°C

MJ11028/29

MJ11032/33

MJ11028/29

MJ11032/33

MJ11030

= 1000 (Min) @ I

= 400 (Min) @ I

Î Î Î

Symbol

CEO

CBO

EBO

, T

qJC

stg

Î Î Î Î Î

= 50 Adc

− 55 to +200

= 25 Adc

Value

1.71

Max

0.58

120

100

300

275

5.0

2.0

Î Î

W/°C

°C/W

Unit

Vdc

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

BASE

TO−204 (TO−3)

MJ110xx = Device Code

MEX

DARLINGTON POWER

CASE 197A

ORDERING INFORMATION

STYLE 1

COMPLEMENTARY

COLLECTOR

CASE

EMITTER 2

MJ11028

MJ11030

MJ11032

60 − 120 VOLTS

TRANSISTORS

NPN

http://onsemi.com

50 AMPERE

300 WATTS

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

xx = 28, 29, 30, 32, 33

Publication Order Number:

BASE

MARKING

DIAGRAM

MJ110xxG

AYYWW

COLLECTOR

CASE

MEX

EMITTER 2

MJ11029

MJ11033

PNP

MJ11028/D

Related parts for MJ11028

MJ11028 Summary of contents

Page 1

... MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − 1000 (Min 400 (Min • Curves to 100 A (Pulsed) • ...

Page 2

... MJ11028 MJ11030 MJ11032 BASE ≈ 25 EMITTER Figure 1. Darlington Circuit Schematic (T = 25_C unless otherwise noted) C MJ11028, MJ11029 MJ11030 MJ11032, MJ11033 MJ11028, MJ11029 MJ11030 MJ11032, MJ11033 MJ11028, MJ11029 MJ11032, MJ11033 http://onsemi.com 2 COLLECTOR ≈ 3.0 k ≈ 25 EMITTER Symbol Min Max V 60 − (BR)CEO 90 − ...

Page 3

... The data of Figure 2 is based on T variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 100 200 5 MJ11028, MJ11030, MJ11032 NPN 25° ...

Page 4

... BSC N 0.760 0.830 19.31 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJ11028/D ...

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