BD650 Bourns Inc., BD650 Datasheet - Page 3

• Manufacturer Part Number: BD650
• Description: Darlington Transistors 62.5W PNP Silicon
• Manufacturer: Bourns Inc.

Specifications of BD650

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 120 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 750
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
50000
10000
R O D U C T
1000
100
-0·5
V
t
p
CE
=
= 300 µs, duty cycle < 2%
TYPICAL DC CURRENT GAIN
-3 V
-1·0
COLLECTOR CURRENT
I
C
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
-0·5
BASE-EMITTER SATURATION VOLTAGE
T
T
T
C
C
C
TYPICAL CHARACTERISTICS
I
t
B
p
= -40°C
= 25°C
= 100°C
T
T
T
= I
= 300 µs, duty cycle < 2%
C
C
C
= -40°C
= 25°C
= 100°C
C
TCS135AD
-1·0
COLLECTOR CURRENT
/ 100
I
C
- Collector Current - A
-10
Figure 3.
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
-2·0
-1·5
-1·0
-0·5
-0·5
PNP SILICON POWER DARLINGTONS
t
I
B
p
= I
= 300 µs, duty cycle < 2%
C
/ 100
TCS135AC
-1·0
COLLECTOR CURRENT
BD646, BD648, BD650, BD652
I
C
- Collector Current - A
-10
Figure 2.
vs
T
T
T
C
C
C
= -40°C
= 25°C
= 100°C
TCS135AB
-10
3