BD900 Bourns Inc., BD900 Datasheet - Page 2

• Manufacturer Part Number: BD900
• Description: Darlington Transistors PNP SILICON POWER DARLINGTON
• Manufacturer: Bourns Inc.

Specifications of BD900

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 750
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
NOTES: 3. These parameters must be measured using pulse techniques, t
thermal characteristics
resistive-load-switching characteristics at 25°C case temperature
†
2
V
V
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
(BR)CEO
R
I
I
CE(sat)
R
I
BE(on)
V
h
CEO
CBO
EBO
t
t
θJC
θJA
on
off
FE
EC
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
PARAMETER
PARAMETER
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
Junction to case thermal resistance
Junction to free air thermal resistance
Turn-on time
Turn-off time
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
I
I
V
C
B
E
C
CE
CE
CE
CE
CB
CB
CB
CB
CB
CB
CB
CB
EB
CE
CE
BE(off)
=
=
= -100 mA
= -3 A
= -30 V
= -30 V
= -40 V
= -50 V
= -45 V
= -60 V
= -80 V
= -100 V
= -45 V
= -60 V
= -80 V
= -100 V
=
=
=
-12 mA
= 3.5 V
-8 A
-5 V
-3 V
-3 V
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
B
B
B
B
B
E
E
E
E
E
E
E
E
C
C
C
C
B
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= -3 A
= -3 A
= -3 A
TEST CONDITIONS
I
R
TEST CONDITIONS
B(on)
L
= 10 Ω
= -12 mA
(see Note 3)
T
T
T
T
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
C
C
C
C
p
= 100°C
= 100°C
= 100°C
= 100°C
= 300 µs, duty cycle ≤ 2%.
†
R O D U C T
I
t
B(off)
p
= 20 µs, dc ≤ 2%
= 12 mA
Specifications are subject to change without notice.
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
AUGUST 1993 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
-100
MIN
MIN
MIN
750
-45
-60
-80
TYP
TYP
TYP
1
5
MAX
MAX
MAX
1.79
62.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.5
-2.5
-3.5
-2
-2
-2
-2
-2
°C/W
°C/W
UNIT
UNIT
UNIT
mA
mA
mA
µs
µs
V
V
V
V