MJD112 ON Semiconductor, MJD112 Datasheet - Page 6

• Manufacturer Part Number: MJD112
• Description: Darlington Transistors 2A 100V Bipolar
• Manufacturer: ON Semiconductor

Specifications of MJD112

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 20 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 2 A
• Dc Collector/base Gain Hfe Min: 200, 500, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MJD112
MJD112G
MJD112−001
MJD112−1G
MJD112RL
MJD112RLG
MJD112T4
MJD112T4G
MJD117
MJD117G
MJD117−001
MJD117−1G
MJD117T4
MJD117T4G
Device
Package Type
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
DPAK−3
DPAK−3
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
http://onsemi.com
6
Package
369C
369D
369C
369D
369C
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
†