MMUN2132LT1 ON Semiconductor, MMUN2132LT1 Datasheet

Digital Transistors 100mA 50V BRT PNP

MMUN2132LT1

Manufacturer Part Number
MMUN2132LT1
Description
Digital Transistors 100mA 50V BRT PNP
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2115LT1.pdf (13 pages)

Specifications of MMUN2132LT1

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
246 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MMUN2132LT1
Manufacturer:
SII
Quantity:
700
Company:
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Part Number:
MMUN2132LT1G
Manufacturer:
ON
Quantity:
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Company:
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Part Number:
MMUN2132LT1G
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Part Number:
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Manufacturer:
ON/安森美
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MMUN2111LT1G Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage,
Temperature Range
This new series of digital transistors is designed to replace a single
A
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
Available in 8 mm embossed tape and reel.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C
Characteristic
Junction-to-Ambient
Junction-to-Lead
Rating
(T
A
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
246 (Note 1)
400 (Note 2)
508 (Note 1)
174 (Note 1)
208 (Note 2)
311 (Note 2)
−55 to +150
2.0 (Note 1)
3.2 (Note 2)
Value
Max
100
50
50
1
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
MMUN21xxLT1G
MMUN21xxLT3G
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
PIN 1
BASE
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
upon manufacturing location.
1
CASE 318
A6x
x
M
G
STYLE 6
SOT−23
ORDERING INFORMATION
2
http://onsemi.com
R1
= Device Code
= A − L (Refer to page 2)
= Date Code*
= Pb−Free Package
R2
3
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
Publication Order Number:
10000/Tape & Reel
1
3000/Tape & Reel
MMUN2111LT1/D
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING
DIAGRAM
Shipping
A6x M G
G
†

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MMUN2132LT1 Summary of contents

Page 1

... Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor ...

Page 2

... A Symbol = CBO = CEO MMUN2111LT1G I EBO MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G = (BR)CBO V (BR)CEO http://onsemi.com 2 R2 (K) Shipping 10 3000/Tape & Reel 10,000/Tape & Reel 22 3000/Tape & Reel 47 3000/Tape & Reel 10,000/Tape & Reel 47 3000/Tape & ...

Page 3

... MMUN2132LT1G MMUN2134LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2113LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2134LT1G MMUN2115LT1G MMUN2116LT1G MMUN2131LT1G MMUN2132LT1G MMUN2130LT1G http://onsemi.com 3 Min Typ Max 35 60 − 100 − 80 140 − 80 140 − 160 250 − 160 250 − ...

Page 4

... A Symbol MMUN2111LT1G R1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G R 1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G http://onsemi.com 4 Min Typ Max 7 15.4 22 28.6 32.9 47 61 3.3 4.7 6 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 250 200 150 100 R = 625°C/W qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve 1000 100 COLLECTOR CURRENT (mA) C Figure 3. DC ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat REVERSE ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat ...

Page 11

... I , COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 34. Output Capacitance 75°C 0.1 0 Figure 36. Input Voltage versus Output Current MMUN2132LT1 1000 75°C 100 −25° 100 75° MHz 25° 0.1 0.01 0.001 Figure 35. Output Current versus Input Voltage = − ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V CE(sat ...

Page 13

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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