NSBA144EDXV6T1 ON Semiconductor, NSBA144EDXV6T1 Datasheet

NSBA144EDXV6T1

Manufacturer Part Number

NSBA144EDXV6T1

Description

Digital Transistors 100mA 50V Dual PNP

Manufacturer

ON Semiconductor

Datasheet

1.NSBA143TDXV6T5.pdf (11 pages)

Specifications of NSBA144EDXV6T1

Configuration

Dual

Transistor Polarity

PNP

Typical Input Resistor

47 KOhms

Typical Resistor Ratio

Mounting Style

SMD/SMT

Package / Case

SOT-563-6

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

- 0.1 A

Peak Dc Collector Current

100 mA

Power Dissipation

357 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Euro Chip Distribution

Part Number:

NSBA144EDXV6T1G

Quantity:

7 808

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NSBA114EDXV6T1,

NSBA114EDXV6T5 SERIES

Dual Bias Resistor

Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBA114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low−power surface mount applications where board space is

at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

April, 2006 − Rev. 6

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation @ T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Total Device Dissipation @ T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Junction and Storage Temperature

Range

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These are Pb−Free Devices

= 25°C unless otherwise noted, common for Q

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

Preferred Devices

= 25°C

Symbol

, T

CBO

CEO

qJA

stg

and Q

−55 to

Value

+150

−100

Max

)

−50

357

350

500

250

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

°C

**This package is inherently Pb−Free.

NSBA1xxxDXV6T1

NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel

NSBA1xxxDXV6T5

NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel

†For information on tape and reel specifications,

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

ORDERING INFORMATION

(3)

(4)

xx = Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code

= Pb−Free Package

(Refer to page 2)

SOT−563* 4000/Tape & Reel

SOT−563* 8000/Tape & Reel

xx M G

Package

(5)

Publication Order Number:

(2)

CASE 463A

SOT−563

PLASTIC

STYLE 1

NSBA114EDXV6/D

Shipping

(1)

(6)

†

Related parts for NSBA144EDXV6T1

NSBA144EDXV6T1 Summary of contents

Page 1

... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT− ...

Page 2

... NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES DEVICE MARKING AND RESISTOR VALUES Device* NSBA114EDXV6T1 / T5 NSBA124EDXV6T1 / T5 NSBA144EDXV6T1 / T5 NSBA114YDXV6T1 / T5 NSBA114TDXV6T1 / T5 (Note 2) NSBA143TDXV6T1 / T5 (Note 2) NSBA113EDXV6T1 / T5 (Note 2) NSBA123EDXV6T1 / T5 (Note 2) NSBA143EDXV6T1 / T5 (Note 2) NSBA143ZDXV6T1 / T5 (Note 2) NSBA124XDXV6T1 / T5 (Note 2) NSBA123JDXV6T1 / T5 (Note 2) NSBA115EDXV6T1 / T5 (Note 2) NSBA144WDXV6T1 (Note 2) *The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1. ...

Page 3

... NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 = 1.0 kW NSBA113EDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 NSBA114EDXV6T1 R 1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 NSBA114YDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1 http://onsemi.com 3 and Q ) (continued) ...

Page 4

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ALL NSBA114EDXV6T1 SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1000 ...

Page 5

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

... NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 10 1 0.1 0 Figure 16. Input Voltage versus Output Current 1000 25°C 75°C 100 ...

Page 7

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 8

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 23. DC ...

Page 9

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 24. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 10

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 ...

Page 11

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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