EMA6DXV5T5 ON Semiconductor, EMA6DXV5T5 Datasheet - Page 2

• Manufacturer Part Number: EMA6DXV5T5
• Description: Digital Transistors 100mA 50V BRT PNP
• Manufacturer: ON Semiconductor

Specifications of EMA6DXV5T5

• Configuration: Dual Common Emitter
• Transistor Polarity: PNP
• Typical Input Resistor: 47 KOhms at NPN, 4.7 KOhms at PNP
• Typical Resistor Ratio: 1 at NPN, 0.47 at PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-553-5
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CE
EB
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 6.0 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
E
B
C
B
C
B
= 0)
= 0)
= 0)
= 5.0 mA)
= 1.0 mA)
B
B
= 0)
= 0)
= 3.5 V, R
= 0.25 V, R
Characteristic
L
L
= 1.0 kW)
= 1.0 kW)
350
300
250
200
150
100
50
0
−50
(T
A
= 25 C unless otherwise noted)
EMA6DXV5T1, EMA6DXV5T5
R
T
qJA
A
, AMBIENT TEMPERATURE (5 C)
0
Figure 1. Derating Curve
= 370 C/W
http://onsemi.com
50
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
R1
FE
OL
OH
100
32.9
Min
160
4.9
50
50
−
−
−
−
−
150
Typ
350
47
−
−
−
−
−
−
−
−
Max
0.25
61.1
100
500
0.2
0.2
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW