MUN5330DW1T1 ON Semiconductor, MUN5330DW1T1 Datasheet - Page 28

• Manufacturer Part Number: MUN5330DW1T1
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of MUN5330DW1T1

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR
5
I
C
/I
V
B
R
Figure 110. Output Capacitance
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 108. V
C
15
, COLLECTOR CURRENT (mA)
−25°C
20
20
25
0.1
25°C
10
CE(sat)
1
0
30
T
30
A
75°C
Figure 112. Input Voltage versus Output
versus I
= −25°C
75°C
35
10
I
f = 1 MHz
I
T
C
40
E
A
, COLLECTOR CURRENT (mA)
= 0 V
25°C
40
C
= 25°C
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45
20
50
Current
50
28
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
75°C
V
Figure 111. Output Current versus Input
1
O
T
40
A
= 0.2 V
= −25°C
2
Figure 109. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
T
4
A
Voltage
= −25°C
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10