2N4402 Fairchild Semiconductor, 2N4402 Datasheet

Digital Transistors TO-92

2N4402

Manufacturer Part Number
2N4402
Description
Digital Transistors TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N4402

Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-92-3
Collector- Emitter Voltage Vceo Max
40 V
Continuous Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings*
, T
*
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B E
2N4402
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
2N4402
Max
83.3
625
200
5.0
-55 to +150
Value
600
5.0
40
40
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
2N4402, Rev A

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2N4402 Summary of contents

Page 1

... Thermal Resistance, Junction to Case JC Thermal Resistance, Junction to Ambient R JA 2001 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 600 mA -55 to +150 C Max Units 2N4402 625 mW 5.0 mW/ C 83.3 C/W 200 C/W 2N4402, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Base Cutoff Current BL ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Switching Times vs Collector Current 250 200 150 100 100 I - COLLECTOR ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics 0.5 0.2 0 COLLECTOR CURRENT (mA) C Common Emitter Characteristics 1 -10mA 1.4 V 1.3 1.2 1.1 h ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PNP General Purpose Amplifier 1 1.5 V ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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