2N5088 Fairchild Semiconductor, 2N5088 Datasheet

Digital Transistors

2N5088

Manufacturer Part Number
2N5088
Description
Digital Transistors
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5089.pdf (7 pages)

Specifications of 2N5088

Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92-3
Maximum Operating Frequency
50 MHz
Collector- Emitter Voltage Vceo Max
30 V
Continuous Collector Current
0.1 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CEO
CBO
EBO
J
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NPN General Purpose Amplifier
Thermal Characteristics
JC
JA
*
Absolute Maximum Ratings*
, T
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1 A to 50 mA.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
B
Derate above 25 C
E
2N5088
2N5089
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
Mark: 1Q / 1R
2N5088
2N5089
2N5088
2N5089
SOT-23
MMBT5088
MMBT5089
2N5088
2N5089
83.3
625
200
5.0
C
Max
-55 to +150
Value
B
*MMBT5088
*MMBT5089
100
4.5
30
25
35
30
350
357
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
2.8
E
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
V
V
C

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2N5088 Summary of contents

Page 1

... SOT-23 Mark 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 TA = 25°C unless otherwise noted 2N5088 2N5089 625 5.0 83.3 200 E B Value Units 4.5 V 100 mA -55 to +150 C Max Units *MMBT5088 *MMBT5089 350 mW 2.8 mW/ C C/W 357 C/W 2N5088/2N5089/MMBT5088/MMBT5089, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V CE( sat ) ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 1200 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Input and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE (V) Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 100 ...

Page 5

Typical Characteristics Contours of Constant Narrow Band Noise Figure 10,000 5,000 2,000 1,000 500 100 Hz BANDWIDTH 200 = 20 Hz 100 1 10 100 I - COLLECTOR CURRENT ( C Contours of ...

Page 6

Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 1.3 h 1 COLLECTOR VOLTAGE (V) CE Typical Common Emitter Characteristics 100 10 h ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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