BAW75-TAP Vishay, BAW75-TAP Datasheet - Page 2

Diodes (General Purpose, Power, Switching) 35 Volt 300mA 2ns

BAW75-TAP

Manufacturer Part Number
BAW75-TAP
Description
Diodes (General Purpose, Power, Switching) 35 Volt 300mA 2ns
Manufacturer
Vishay
Datasheet

Specifications of BAW75-TAP

Product
General Purpose Diodes
Peak Reverse Voltage
35 V
Forward Continuous Current
0.15 A
Max Surge Current
2 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
DO-35-2
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
35V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAW75-TAP
Manufacturer:
Vishay Semiconductors
Quantity:
47 360
BAW75
Vishay Semiconductors
Electrical Characteristics
T
Package Dimensions
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
= 25 °C, unless otherwise specified
Document no.: 6.560-5004.02-4
Rev. 6 - Date: 29. January 2007
94 9366
Parameter
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
26 (1.024) min.
in millimeters (inches):
I
F
V
I
I
= I
I
R
R
F
R
V
= 1 mA, R
= 5 µA, t
R
= 10 mA, V
= 25 V, T
R
Test condition
V
= 10 mA, I
= 0, f = 1 MHz,
t
I
V
HF
F
p
R
= 0.3 ms
= 30 mA
= 50 mV
= 25 V
p
j
/T = 0.01,
L
= 150 °C
R
= 100 Ω
R
= 6 V,
= 1 mA
3.9 (0.154) max.
Cathode identification
DO-35
Symbol
V
C
V
I
I
(BR)
t
t
R
R
rr
rr
F
D
DiodesEurope@vishay.com
Min.
35
26 (1.024) min.
Typ.
Document Number 85550
Max.
1000
100
100
4
4
2
Rev. 1.7, 17-Aug-10
Unit
mV
nA
μA
pF
ns
ns
V

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