BAQ34GS08 Vishay, BAQ34GS08 Datasheet - Page 2

• Manufacturer Part Number: BAQ34GS08
• Description: Diodes (General Purpose, Power, Switching) 60 Volt 200mA 2.0 Amp IFSM
• Manufacturer: Vishay

Specifications of BAQ34GS08

• Product: General Purpose Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 2 A
• Configuration: Single
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: MiniMELF SOD-80-2
• Diode Type: Small Signal
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 70V
• Forward Voltage Vf Max: 1V
• Forward Surge Current Ifsm Max: 2A
• Diode Case Style: SOD-80
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAQ33, BAQ34, BAQ35
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
amb
94 9079
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
10000
1000
100
Parameter
10
1
0
V
R
Scattering Limit
T
= V
j
4 0
- Junction Temperature (°C)
RRM
[e-mail], [e-mail],
8 0
For technical questions within your region, please contact one of the following:
E ≤ 300 lx, rated V
120
I
I
E ≤ 300 lx, V
E ≤ 300l x, V
E ≤ 300 lx, V
R
R
E ≤ 300 lx, rated V
V
= 5 µA, t
= 5 µA, t
R
Test condition
I
160
t
F
= 0, f = 1 MHz
t
p
p
= 100 mA
= 0.3 ms
= 0.3 ms
p
p
/T = 0.01,
/T = 0.01,
200
R
R
R
R
, T
= 15 V
= 30 V
= 60 V
j
= 125 °C
R
BAQ33
BAQ34
BAQ35
BAQ33
BAQ34
BAQ35
Part
94 9078
Figure 2. Forward Current vs. Forward Voltage
1000
Symbol
100
0.1
V
V
V
10
C
1
V
(BR)
(BR)
(BR)
I
I
I
I
I
[e-mail]
R
R
R
R
R
F
D
0
T
j
= 2 5 °C
0.4
V
Min.
140
F
40
70
- Forward Voltage (V)
0.8
Typ.
Scattering Limit
0.5
0.5
0.5
1
1.2
Document Number 85537
1.6
Rev. 1.8, 01-Sep-10
Max.
0.5
1
3
1
1
1
3
2.0
Unit
nA
μA
nA
nA
nA
pF
V
V
V
V