BZT52H-C10,115 NXP Semiconductors, BZT52H-C10,115 Datasheet - Page 3
![DIODE ZENER 10V 375MW SOD123F](/photos/5/25/52532/568-sod-123f_sml.jpg)
BZT52H-C10,115
Manufacturer Part Number
BZT52H-C10,115
Description
DIODE ZENER 10V 375MW SOD123F
Manufacturer
NXP Semiconductors
Datasheet
1.BZT52H-C10115.pdf
(13 pages)
Specifications of BZT52H-C10,115
Package / Case
SOD-123 Flat Leads
Voltage - Zener (nom) (vz)
10V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
200nA @ 7V
Tolerance
±5%
Power - Max
375mW
Impedance (max) (zzt)
10 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
10 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
6.25 mV / K
Zener Current
250 mA
Power Dissipation
830 mW
Maximum Reverse Leakage Current
0.2 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3752-2
934059401115
BZT52H-C10 T/R
934059401115
BZT52H-C10 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZT52H-C10,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BZT52H_SER
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
[2]
[3]
Symbol
I
I
P
P
T
T
T
Symbol
R
R
F
ZSM
j
amb
stg
ZSM
tot
th(j-a)
th(j-sp)
t
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
p
= 100 μs; square wave; T
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Limiting values
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
j
= 25 °C prior to surge.
Conditions
in free air
Conditions
T
amb
≤ 25 °C
Single Zener diodes in a SOD123F package
[1]
[2]
[3]
[1]
[2]
[3]
BZT52H series
Min
-
-
-
Min
-
-
-
-
-
-
−65
−65
Typ
-
-
-
Max
250
see
Table
and
40
375
830
150
+150
+150
© NXP B.V. 2010. All rights reserved.
10
Max
330
150
70
8,
9
Unit
mA
W
°C
°C
°C
mW
mW
2
2
Unit
K/W
K/W
K/W
.
.
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