BZX384-B5V6,115 NXP Semiconductors, BZX384-B5V6,115 Datasheet - Page 8
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BZX384-B5V6,115
Manufacturer Part Number
BZX384-B5V6,115
Description
DIODE ZENER 5.6V 300MW SOD323
Manufacturer
NXP Semiconductors
Datasheet
1.BZX384-C11115.pdf
(11 pages)
Specifications of BZX384-B5V6,115
Package / Case
SC-76, SOD-323, UMD2
Voltage - Zener (nom) (vz)
5.6V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
1µA @ 2V
Tolerance
±2%
Power - Max
300mW
Impedance (max) (zzt)
40 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
5.6 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
1.2 mV / K
Power Dissipation
300 mW
Maximum Reverse Leakage Current
1 uA
Maximum Zener Impedance
40 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3836-2
934057367115
BZX384-B5V6 T/R
934057367115
BZX384-B5V6 T/R
NXP Semiconductors
GRAPHICAL DATA
2004 Mar 22
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
(1) T
(2) T
Fig.2
BZX384-B/C2V4 to B/C4V3.
T
Fig.4
P ZSM
j
S Z
(W)
= 25 to 150 °C.
10
10
10
−1
−2
−3
j
j
0
1
10
3
2
= 25 °C (prior to surge).
= 150 °C (prior to surge).
0
−1
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Temperature coefficient as a function of
working current; typical values.
20
1
(1)
(2)
4V3
duration (ms)
40
3V9
2V4
2V7
3V3
I Z (mA)
3V6
MBG801
MBG783
3V0
10
60
8
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.3
BZX384-B/C4V7 to B/C12.
T
Fig.5
j
j
S Z
(mA)
= 25 °C.
= 25 to 150 °C.
I F
300
200
100
10
−5
5
0
0
0.6
0
Forward current as a function of forward
voltage; typical values.
Temperature coefficient as a function of
working current; typical values.
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
12
BZX384 series
6V2
5V6
5V1
4V7
V F (V)
Product data sheet
16
I Z (mA)
MBG782
MBG781
20
1