CMPD1001S Central Semiconductor, CMPD1001S Datasheet

Diodes (General Purpose, Power, Switching) SW Diode Dual High A

CMPD1001S

Manufacturer Part Number

CMPD1001S

Description

Diodes (General Purpose, Power, Switching) SW Diode Dual High A

Manufacturer

Central Semiconductor

Datasheet

1.CMPD1001S.pdf (2 pages)

Specifications of CMPD1001S

Product

Switching Diodes

Peak Reverse Voltage

90 V

Forward Continuous Current

0.25 A

Max Surge Current

6 A

Configuration

Dual Parallel

Recovery Time

50 ns

Forward Voltage Drop

1 V

Maximum Reverse Leakage Current

0.1 uA

Maximum Power Dissipation

0.35 W

Operating Temperature Range

- 65 C to + 150 C

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Mounting Style

SMD/SMT

Package / Case

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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The following configurations are available:

CMPD1001

CMPD1001A

CMPD1001S

MAXIMUM RATINGS: (T A =25°C)

Continuous Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Repetitive Reverse Current

Forward Surge Current, tp=1.0 µs

Forward Surge Current, tp=1.0 s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE: (T A =25°C unless otherwise noted)

SYMBOL

BV R

I R

V F

C T

t rr

SILICON SWITCHING DIODE

SURFACE MOUNT

TEST CONDITIONS

I R =100µA

V R =90V

V R =90V, T A =150°C

I F =10mA

I F =50mA

I F =100mA

I F =200mA

I F =400mA

V R =0V, f=1.0 MHz

I R =I F =30mA, Rec. to 3.0mA, R L =100Ω

HIGH CURRENT

SOT-23 CASE

CMPD1001

CMPD1001A

CMPD1001S

SINGLE

DUAL, COMMON ANODE

DUAL, IN SERIES

SYMBOL

T J , T stg

I RRM

I FRM

I FSM

Θ JA

V R

P D

I F

DESCRIPTION:

The Central Semiconductor CMPD1001 series

types are silicon switching diodes manufactured

by the epitaxial planar process, designed for

applications requiring high current capability.

Semiconductor Corp.

MIN

-65 to +150

MARKING CODE: L20

MARKING CODE: L22

MARKING CODE: L21

250

600

350

357

6.0

1.0

MAX

0.75

0.84

0.90

1.00

1.25

100

R5 (6-August 2003)

UNITS

°C/W

µA

°C

Related parts for CMPD1001S

CMPD1001S Summary of contents

Page 1

... SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001A CMPD1001S MAXIMUM RATINGS =25°C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1.0 µs Forward Surge Current, tp=1.0 s ...

Page 2

... Cathode MARKING CODE: L20 CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE LEAD CODE: LEAD CODE: CMPD1001A CMPD1001S 1) Cathode D2 1) Anode D2 2) Cathode D1 2) Cathode D1 3) Anode D1, Anode D2 3) Anode D1, Cathode D2 MARKING CODE: L22 MARKING CODE: L21 R5 (6-August 2003 ...

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