BAS33-TR Vishay, BAS33-TR Datasheet - Page 2

• Manufacturer Part Number: BAS33-TR
• Description: Diodes (General Purpose, Power, Switching) 40 Volt 200mA 2.0 Amp IFSM
• Manufacturer: Vishay

Specifications of BAS33-TR

• Product: General Purpose Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 2 A
• Configuration: Single
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.003 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: DO-35-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAS33/BAS34
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
Package Dimensions
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
amb
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9079
10000
1000
Parameter
100
10
1
Document no.: 6.560-5004.02-4
Rev. 6 - Date: 29.January 2007
94 9366
0
V
R
Scattering Limit
T
= V
j
4 0
- Junction Temperature (°C)
RRM
8 0
26 min. (1.024)
I
E ≤ 300 lx, V
E ≤ 300 lx, V
E ≤ 300 lx, V
E ≤ 300 lx, V
I
V
in millimeters (inches):
F
R
R
= 100 mA
= 5 µA, t
120
= 0, f = 1 MHz
Test condition
160
p
/T = 0.01, t
R
R
R
R
, T
= 15V
= 30 V
j
200
= 125 °C
p
3.9 max. (0.154)
= 0.3 ms
Cathode Identification
DO35
BAS33
BAS34
BAS33
BAS34
Part
94 9078
Figure 2. Forward Current vs. Forward Voltage
Symbol
1000
V
V
100
C
V
0.1
(BR)
(BR)
26 min. (1.024)
I
I
I
I
10
R
R
R
R
F
D
1
0
T
j
= 2 5 °C
0.4
Min
V
40
70
F
- Forward Voltage (V)
0.8
Typ.
0.5
0.5
Scattering Limit
1
1.2
Document Number 85541
1.6
Rev. 1.6, 16-Feb-07
1000
Max
0.5
3
1
1
3
2.0
Unit
mV
μA
nA
nA
nA
pF
V
V