MWI450-12E9 IXYS, MWI450-12E9 Datasheet
MWI450-12E9
Specifications of MWI450-12E9
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MWI450-12E9 Summary of contents
Page 1
... VJ d(off 600 450 ± 2.7 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 11/12 9/ Maximum Ratings 1200 ± 20 640 440 I = 900 CM V < V CEK = 2.7 Ω ...
Page 2
... Weight * ) ·I resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings 450 900 = 0 V 35000 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
Page 3
... Dimensions 0.0394" 2.884·10 1.523·10 7.617·10 0.03 0.036 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved = tolerance for all dimensions: Diode IGBT τ 1·10 2.344· 5·10 5.97· 0.012 5.97·10 ...
Page 4
... V = 600 100 -10 - [µ Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 800 600 400 9 V 200 4 6 800 600 400 200 10 12 400 300 200 100 3 MWI 450- 125° ...
Page 5
... Fig. 10 Typ. turn off energy and switching times versus gate resistor single pulse 1 10 100 1000 [ms] t Fig. 12 Typ. transient thermal impedance 600 500 400 t d(off) 300 200 100 800 2500 t d(off) 2000 1500 1000 500 diode IGBT MWI450-12E9 10000 20100401a ...