MWI300-12E9 IXYS, MWI300-12E9 Datasheet
MWI300-12E9
Specifications of MWI300-12E9
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MWI300-12E9 Summary of contents
Page 1
... VJ d(off 600 300 ± 3.3 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved /2 9/ Maximum Ratings 200 ± 20 530 375 I = 750 CM V < V CEK = 3.3 Ω ...
Page 2
... Weight * ) ·I resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 300 600 = 0 V 2400 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
Page 3
... Dimensions 0.0394" 2.884·0 .523·0 7.67·0 0.03 0.036 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved = tolerance for all dimensions: Diode IGBT τ ·0 2.344· 5·0 5.97· 0.02 5.97·0 ...
Page 4
... I = 100 -10 -15 - [µ Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 600 500 400 300 200 100 0 2.5 3.0 Fig. 2 Typ. transfer characteristics 600 500 400 300 9 V 200 ...
Page 5
... Fig. 0 Typ. turn off energy and switching times versus gate resistor single pulse 1 10 100 1000 [ms] t Fig. 2 Typ. transient thermal impedance 800 600 t d(off) 400 200 600 4500 4000 3500 3000 2500 2000 1500 1000 500 0 40 diode IGBT MWI300-12E9 10000 ...