GB20XF60K Vishay, GB20XF60K Datasheet

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GB20XF60K

Manufacturer Part Number
GB20XF60K
Description
IGBT Modules 30 Amp 600 Volt Non-Punch Through
Manufacturer
Vishay
Datasheet

Specifications of GB20XF60K

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
30 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Mounting Style
Screw
Package / Case
Econo 2
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (max)
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94472
Revision: 01-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Maximum power dissipation
(IGBT and Diode)
Maximum operating junction temperature
Storage temperature range
Isolation voltage
t
sc
I
V
C
CE(on)
at T
at T
V
J
C
CES
= 150 °C
(typical)
= 80 °C
ECONO2 6PACK
IGBT Sixpack Module, 21 A
For technical questions, contact: ind-modules@vishay.com
> 10 µs
1.88 V
600 V
21 A
SYMBOL
V
V
V
T
I
I
I
P
ISOL
T
CES
I
CM
LM
FM
I
Stg
GE
C
F
D
J
T
T
T
T
T
T
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
FEATURES
• Low diode V
• 10 µs short circuit capability
• Square RBSOA
• Low V
• HEXFRED
• Positive V
• Ceramic DBC substrate
• Low stray inductance design
• Speed 8 to 60 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial market
BENEFITS
• Benchmark efficiency for motor control
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Low junction to case thermal resistance
recovery characteristics
CE(on)
CE(on)
®
non punch through IGBT technology
F
Vishay High Power Products
antiparallel diode with ultrasoft reverse
AC 2500 (minimum)
temperature coefficient
- 40 to + 125
MAX.
± 20
600
185
103
150
30
21
60
60
30
21
60
GB20XF60K
www.vishay.com
UNITS
°C
W
V
A
V
V
RoHS
COMPLIANT
1

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GB20XF60K Summary of contents

Page 1

... ° ° ° Stg V ISOL For technical questions, contact: ind-modules@vishay.com GB20XF60K Vishay High Power Products F non punch through IGBT technology CE(on) ® antiparallel diode with ultrasoft reverse temperature coefficient CE(on) MAX. 600 ± 20 185 103 150 - 125 AC 2500 (minimum) www.vishay.com RoHS ...

Page 2

... GB20XF60K Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage ΔV Collector to emitter voltage Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T ...

Page 3

... Fig Typical IGBT Output Characteristics T = 125 ° µ Document Number: 94472 Revision: 01-Sep-08 IGBT Sixpack Module SYMBOL MIN thJC - R - thCS 2 For technical questions, contact: ind-modules@vishay.com GB20XF60K Vishay High Power Products TYP. MAX. UNITS - 1.13 - 1.69 0. 3.3 170 - 20 I ce=10A I ce=20A 15 I ce=40A 10 5 ...

Page 4

... GB20XF60K Vishay High Power Products 1.1 0.9 0.7 0.5 0.3 0 (A) Fig Typical Energy Loss vs 125 ° 200 µ Ω 0.1 0. (A) Fig Typical Switching Time vs 125 ° 200 µ Ω 0.8 0.6 0.4 0 Ω Ω ) Fig Typical Energy Loss vs 125 ° 200 µH; V ...

Page 5

... C J Document Number: 94472 Revision: 01-Sep-08 IGBT Sixpack Module 120 160 120 160 20 µs 100 µ 1000 10000 For technical questions, contact: ind-modules@vishay.com GB20XF60K Vishay High Power Products 100 100 Vce (V) Fig Reverse Bias SOA T = 150 ° 240 Tj = 25° 125°C ...

Page 6

... GB20XF60K Vishay High Power Products (A) Fig Typical Diode 125 °C J www.vishay.com 6 IGBT Sixpack Module 4.7 Ω Ω Ω Ω Ω vs 950 900 850 800 750 700 650 dif/dt (A/μs) Fig Typical Diode I vs. dI /dt For technical questions, contact: ind-modules@vishay.com Ω ) Fig Typical Diode I vs ...

Page 7

... τ τ τ 1 τ 2 τ 1 Ci= τi/Ri Ci= i/Ri 1E-04 1E-03 1E- Rectangular Pulse Duration (sec) For technical questions, contact: ind-modules@vishay.com GB20XF60K Vishay High Power Products τ i (sec) Ri (°C/ 0.263 0.000265 0.284 0.005336 C τ 0.583 0.022245 3 τ 3 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + tc ...

Page 8

... GB20XF60K Vishay High Power Products Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Diode clamp/ D.U. D.U.T./ driver R G Fig. C.T.2 - RBSOA Circuit www.vishay.com 8 IGBT Sixpack Module D.U. Fig. C.T.5 - Resistive Load Circuit For technical questions, contact: ind-modules@vishay.com + D.U. Fig. C.T.3 - S.C. SOA Circuit Diode clamp/ D ...

Page 9

... Insulated Gate Bipolar Transistor (IGBT IGBT Generation 5 NPT - Current rating ( Circuit configuration (X = Sixpack or three phase inverter) - Package indicator (F = ECONO2) - Voltage rating (60 = 600 V) - Speed/type (K = Ultrafast IGBT/Speed kHz LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com GB20XF60K Vishay High Power Products http://www.vishay.com/doc?95089 http://www.vishay.com/doc?95090 www.vishay.com 9 ...

Page 10

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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