FMM7G30US60N Fairchild Semiconductor, FMM7G30US60N Datasheet - Page 4

IGBT Modules 600V 30A Module

FMM7G30US60N

Manufacturer Part Number
FMM7G30US60N
Description
IGBT Modules 600V 30A Module
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMM7G30US60N

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
30 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2003 Fairchild Semiconductor Corporation
0.005
1 0 0
1 2 0
1 0 0
0.01
8 0
6 0
4 0
2 0
Fig 5. Transient Thermal Impedance
Fig 1. Typical Output Characteristics
Fig 3. Typical Saturation Voltage
0.1
8 0
6 0
4 0
2 0
0
0
5
1
0
10
Common Emitter
T
Common Emitter
V
T
T
-5
C o l l e c t o r - E m i t t e r V o l t a g e , V
C
C
C
GE
C o l l e c t o r - E m i t t e r V o l t a g e , V
= 125
= 25 ℃ ━━
= 125 ℃ ------
= 15 V
Characteristics
1
10
o
C
-4
Rectangular Pulse Duration [sec]
1
20V
10
2
18V
-3
16V
15V
3
10
-2
10
4
-1
C E ( s a t )
C E ( s a t )
IGBT
DIODE :
14V
V
[ V ]
5
10
[ V ]
1 0
GE
:
0
12V
= 10V
10
6
1
Fig 2. Typical Saturation Voltage
Fig 4. Saturation Voltage vs. Case
5 0 0 0
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
Fig 6. Capacitance Characteristics
1 0 0
4 . 0
3 . 5
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
8 0
6 0
4 0
2 0
0
0
0 . 1
- 5 0
0
C i e s
C o e s
C r e s
Common Emitter
T
Common Emitter
V
C
Characteristics
Temperature at Variant Current Level
GE
= 25
= 15 V
C o l l e c t o r - E m i t t e r V o l t a g e , V
C o l l e c t o r - E m i t t e r V o l t a g e , V
o
C
1
C a s e T e m p e r a t u r e , T
20V
0
18V
16V
2
15V
1
5 0
3
V
T
C o m m o n E m i t t e r
14V 12V
G E
C
= 2 5
C
= 0 V , f = 1 M H z
4
[
o
1 0 0
C ]
o
C
C E ( s a t )
C E
1 0
V
5
[ V ]
GE
FMM7G30US60N Rev. A
= 10V
[ V ]
15 A
30 A
60 A
1 5 0
6

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