50MT060ULSTAPBF Vishay, 50MT060ULSTAPBF Datasheet - Page 2

• Manufacturer Part Number: 50MT060ULSTAPBF
• Description: IGBT Transistors 600 Volt 100 Amp Low Side Chopper
• Manufacturer: Vishay

Specifications of 50MT060ULSTAPBF

• Package / Case: MTP-14
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Power Dissipation Pd: 445W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 100A
• Leaded Process Compatible: Yes
• Collector Emitter Saturation Voltage Vce(sat): 2.55V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50MT060ULSTAPbF
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Diode reverse breakdown voltage
Temperature coefficient of threshold voltage
Forward transconductance
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode junction capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
For technical questions, contact:
b
ΔV
J
SYMBOL
SYMBOL
dI
V
"Low Side Chopper" IGBT MTP
J
V
= 25 °C unless otherwise specified)
V
GE(th)
(rec)M
(BR)CES
C
I
I
C
C
CE(on)
V
V
Q
Q
E
E
(Ultrafast Speed IGBT), 100 A
GE(th)
E
E
= 25 °C unless otherwise specified)
Q
E
E
Q
g
CES
GES
C
t
I
oes
BR
FM
res
on
off
on
off
ies
rr
rr
ge
gc
ts
ts
fe
rr
g
t
/ΔT
/dt
J
V
V
V
V
I
I
V
V
V
V
I
I
V
I
V
V
V
R
energy losses include tail and diode
reverse recovery
V
R
energy losses include tail and diode
reverse recovery
V
V
f = 1.0 MHz
V
V
dI/dt = 200 A/μs
R
C
R
F
F
C
CC
GE
CC
CC
GE
CC
R
CC
GE
GE
GE
GE
CE
CE
GE
GE
GE
g
g
g
= 100 A, V
= 100 A, V
= 200 μA
= 0.5 mA
= 100 A
= 5 Ω, T
= 5 Ω, T
= 600 V, f = 1.0 MHz
= 5 Ω
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= 50 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 15 V
= 0 V
= 480 V
= 480 V, I
= 480 V, I
= 30 V
= 480 V, I
GE
TEST CONDITIONS
TEST CONDITIONS
, I
J
J
C
[e-mail]
C
CE
CE
GE
GE
C
C
C
C
= 25 °C,
= 125 °C,
= 250 μA
= 500 μA
C
C
C
= 100 A
= 50 A
= 100 A
= 100 A, T
= 600 V
= 600 V, T
= 0 V
= 0 V, T
= 50 A, V
= 50 A, V
= 50 A
J
= 150 °C
J
GE
GE
J
= 150 °C
= 150 °C
= 15 V,
= 15 V,
MIN.
MIN.
600
600
22
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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Document Number: 94540
TYP.
TYP.
9800
1.69
1.96
1.88
1.64
1.56
- 13
370
163
602
121
118
320
236
0.7
1.7
2.4
1.1
2.5
3.6
6.5
29
64
99
-
-
-
-
-
-
Revision: 01-Mar-10
14 700
MAX.
± 250
MAX.
2.31
2.55
2.24
0.25
1.82
1.74
555
245
903
182
177
150
735
1.2
2.6
3.8
1.7
3.8
5.5
9.8
96
6
6
-
-
-
-
-
UNITS
UNITS
mV/°C
A/μs
mA
mJ
nA
nC
nC
pF
ns
S
A
V
V