IXGT20N 60BD1 IXYS
IXGT20N 60BD1
Manufacturer Part Number
IXGT20N 60BD1
Description
IGBT Transistors 40 Amps 600 V 2.0 V Rds
Manufacturer
IXYS
Specifications of IXGT20N 60BD1
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-268AA-3
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant