BZX79-C13,133 NXP Semiconductors, BZX79-C13,133 Datasheet - Page 6
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BZX79-C13,133
Manufacturer Part Number
BZX79-C13,133
Description
DIODE ZENER 13V 500MW DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BZX79-C5V1113.pdf
(10 pages)
Specifications of BZX79-C13,133
Package / Case
DO-204AH, DO-35, Axial
Voltage - Zener (nom) (vz)
13V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
100nA @ 8V
Tolerance
±5%
Power - Max
500mW
Impedance (max) (zzt)
30 Ohm
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C
Zener Voltage
13.25 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
9.4 mV / K
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
30 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933117820133
BZX79-C13 AMO
BZX79-C13 AMO
BZX79-C13 AMO
BZX79-C13 AMO
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
2002 Feb 27
R
R
handbook, full pagewidth
SYMBOL
Voltage regulator diodes
th j-tp
th j-a
R th j-a
(K/W)
10
10
10
1
3
2
10
−1
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1
PARAMETER
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
≤0.001
10
10
6
2
CONDITIONS
10
3
t p
10
4
T
BZX79 series
t p (ms)
VALUE
Product data sheet
δ
300
380
=
t p
T
MBG930
10
5
UNIT
K/W
K/W