BA979-GS08 Vishay, BA979-GS08 Datasheet - Page 2

PIN Diodes 30 Volt 50mA 50nA IR @ 30V

BA979-GS08

Manufacturer Part Number
BA979-GS08
Description
PIN Diodes 30 Volt 50mA 50nA IR @ 30V
Manufacturer
Vishay
Datasheet

Specifications of BA979-GS08

Configuration
Single
Reverse Voltage
30 V
Forward Continuous Current
50 mA
Frequency Range
HF, VHF, UHF
Carrier Life
4 us
Forward Voltage Drop
1 V at 20 mA
Maximum Diode Capacitance
0.5 pF at 0 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
50 Ohms at 1.5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
Quadro MELF SOD-80
Capacitance Cd Max @ Vr F
0.5pF
Resistance @ If
50ohm
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
20mA
No. Of Pins
2
Forward Voltage
1V
Diode Type
RF Pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BA979-GS08
Quantity:
50 000
BA979, BA979S
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
amb
amb
Figure 2. Differential Forward Resistance vs. Forward Current
95 9734
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 9735
10 000
Figure 1. Forward Current vs. Forward Voltage
0.01
100
1000
Parameter
0.1
100
10
1
10
0.001
1
0
T
amb
= 25 °C
0.4
f > 20 MHz
T
j
0.01
= 25 °C
I
V
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
F
- Forward Current (mA)
- Forward Voltage (V)
For technical questions within your region, please contact one of the following:
0.8
Scattering Limit
0.1
f = 100 MHz, I
I
F
1.2
f = 100 MHz, V
f = 100 MHz, V
= 10 mA, I
Test condition
I
V
F
R
= 20 mA
1
= 30 V
1.6
R
F
= 10 mA
= 1.5 mA
R
R
2.0
= 0
= 0
10
BA979S
BA979
Part
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
95 9733
- 20
- 40
- 60
- 80
Symbol
20
C
0
V
I
z
z
r
DiodesEurope@vishay.com
τ
R
f
F
D
f
r
r
0
2
, modulated with 200 kHz, m = 100 % (MHz)
Π
- Circuit with 10 dB Attenuation
Min
20
5
9
f
1
= 100 MHz unmodulated
V
0
= 40 dBmV
Typ.
40
4
Document Number 85533
Rev. 1.5, 05-Aug-10
60
1000
Max
0.5
50
50
80
Unit
mV
nA
pF
µs
Ω
2

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