1N5624/4 Vishay, 1N5624/4 Datasheet - Page 2

• Manufacturer Part Number: 1N5624/4
• Description: Rectifiers 3.0 Amp 200 Volt
• Manufacturer: Vishay

Specifications of 1N5624/4

• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1 V
• Recovery Time: 6000 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 1 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOD-64
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 200V
• Avg. Forward Curr (max): 3A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 100A
• Forward Voltage: 1V
• Operating Temp Range: -55C to 175C
• Package Type: SOD-64
• Rev Recov Time: 7500ns
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
16392
94 9563
100.000
10.000
Fig. 1 - Max. Thermal Resistance vs. Lead Length
1.000
0.100
0.010
0.001
Fig. 2 - Forward Current vs. Forward Voltage
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
T
j
=175°C
5
V
I - Lead Length (mm)
F
10
– Forward Voltage ( V )
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For technical questions within your region, please contact one of the following:
T
15
j
=25°C
T
L
I
l
= constant
F
I
F
= 1 A, dI/d
20
= 0.5 A, I
I
R
V
I
F
R
l
TEST CONDITION
= 100 μA, t
V
= 1 A, dI/d
R
25
= V
amb
= 4 V, f = 1 MHz
Standard Avalanche Sinterglass
t
V
RRM
p
R
I
R
t
F
= 0.3 ms
= 25 °C, unless otherwise specified)
= 5 A/μs, V
30
= 1 A, i
= V
= 3 A
, T
amb
RRM
p
j
t
/T = 0.01,
= 100 °C
= 5 A/μs
R
= 25 °C, unless otherwise specified)
= 0.25 A
R
= 50 V
Diode
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
16393
16394
Fig. 4 - Reverse Current vs. Junction Temperature
SYMBOL
1000
100
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3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
10
Q
C
1
V
t
t
I
I
(BR)
0.0
R
R
rr
rr
25
F
D
rr
0.2
PCB: d=25mm
V
R
thJA
R
50
T amb - Ambient Temperature (°C)
= V
T
0.4 0.6
=70K/W
j
MIN.
– Junction Temperature ( °C )
R R M
-
-
-
-
-
-
-
-
75
0.8 1.0
100
TYP.
0.1
3.5
4.5
40
5
8
-
-
1.2 1.4
125
half sinewave
R
Document Number: 86063
V
thJA
R
l=10mm
=V
=25K/W
150
RRM
MAX
1600
Rev. 1.5, 21-Sep-10
1.6
7.5
10
60
12
1
1
5
175
1.8
UNIT
μC
μA
μA
pF
μs
μs
V
V