BYT54M-TR Vishay, BYT54M-TR Datasheet - Page 2

• Manufacturer Part Number: BYT54M-TR
• Description: Rectifiers 1000 Volt 0.75 Amp 30 Amp IFSM
• Manufacturer: Vishay

Specifications of BYT54M-TR

• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.5 V at 1 A
• Recovery Time: 100 ns
• Forward Continuous Current: 1.25 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 165 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOD-57
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1.25A
• Forward Voltage Vf Max: 1.5V
• Reverse Recovery Time Trr Max: 100ns
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
116
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16338
0.001
Fig. 2 - Forward Current vs. Forward Voltage
0.01
120
100
949552
0.1
80
60
40
20
10
0
1
0
0
T
0.5
j
= 175 °C
5
V
F
1.0
l - Lead Length (mm)
- Forward Voltage (V)
10
[e-mail], [e-mail],
T
1.5
j
For technical questions within your region, please contact one of the following:
= 25 °C
15
2.0
I
F
T
= 0.5 A, I
l
L
20
Lead length l = 10 mm, T
V
On PC board with spacing 25 mm
= constant
2.5
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
25
3.0
l
V
RRM
R
I
R
TEST CONDITION
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
3.5
amb
30
RRM
j
= 150 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
16339
16340
SYMBOL
SYMBOL
1000
[e-mail]
100
R
R
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
thJA
thJA
V
0
t
I
I
1
R
R
rr
25
F
0
PCB: d = 25 mm
R
V
thJA
R
20
T
= V
50
amb
T
= 100 K/W
j
RRM
40
- Junction Temperature (°C)
MIN.
- Ambient Temperature (°C)
-
-
-
-
60
75
80 100 120 140 160 180
VALUE
100
100
45
TYP.
-
-
-
-
R
125
thJA
Document Number: 86031
half sinewave
I = 10 mm
V
R
= 45 K/W
= V
150
MAX.
Rev. 1.7, 25-Aug-10
RRM
150
100
1.5
5
175
UNIT
K/W
K/W
UNIT
μA
μA
ns
V