MTZJT-7710B Rohm Semiconductor, MTZJT-7710B Datasheet - Page 4

• Manufacturer Part Number: MTZJT-7710B
• Description: DIODE ZENER 10V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-7710B

• Voltage - Zener (nom) (vz): 10V
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Power - Max: 500mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Operating Temperature: -65°C ~ 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -

Diodes
0.001
0.01
100
0.1
0.1
10
9.9
9.8
9.7
9.6
9.5
10
10
1
1
0.1
8.5
Ta=25℃
Ta=-25℃
9
Zz-Iz CHARACTERISTICS
ZENER CURRENT(mA)
Vz-Iz CHARACTERISTICS
ZENER VOLTAGE:Vz(V)
Vz DISRESION MAP
9.5
Ta=75℃
AVE:9.761V
10
1
10.5
Ta=25℃
n=30pcs
IZ=5mA
Ta=175℃
Ta=125℃
11
11.5
10
10000
0.001
1000
0.01
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
0.1
10
1
0
1
0
1
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
IR DISRESION MAP
2
AVE:0.119nA
3
4
Ta=125℃
Ta=175℃
Ta=75℃
Ta=25℃
Ta=-25℃
5
Ta=25℃
VR=7.0V
n=30pcs
6
7
1000
100
10
25
24
23
22
21
20
19
18
17
16
15
1
0
1
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
2
Ct DISRESION MAP
AVE:19.35pF
Rev.D
3
MTZJ10B
4
5
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
6
4/4
7