MTZJT-7711C Rohm Semiconductor, MTZJT-7711C Datasheet - Page 4

• Manufacturer Part Number: MTZJT-7711C
• Description: DIODE ZENER 11V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-7711C

• Voltage - Zener (nom) (vz): 11V
• Current - Reverse Leakage @ Vr: 200nA @ 8V
• Power - Max: 500mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Operating Temperature: -65°C ~ 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -

Diodes
0.001
0.01
100
10.9
10.8
10.7
10.6
10.5
10
0.1
10
11
1
1
0.1
9.5
Ta=-25℃
Ta=25℃
10
Zz-Iz CHARACTERISTICS
Vz-Iz CHARACTERISTICS
ZENER CURRENT(mA)
ZENER VOLTAGE:Vz(V)
Vz DISRESION MAP
10.5
AVE:10.732V
11
1
11.5
Ta=125℃
Ta=75℃
Ta=175℃
Ta=25℃
n=30pcs
IZ=5mA
12
12.5
10
0.0001
10000
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
1000
0.01
100
1
0
0.1
10
1
0
1
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
2
IR DISRESION MAP
AVE:0.120nA
3
4
Ta=175℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5
6
Ta=25℃
VR=8.0V
n=30pcs
7
8
1000
100
100
10
90
80
70
60
50
40
30
20
10
1
0
0
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2
Ct DISRESION MAP
3
AVE:54.1pF
Rev.D
4
MTZJ11B
5
6
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
7
8
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