MTZJT-7712B Rohm Semiconductor, MTZJT-7712B Datasheet - Page 4

• Manufacturer Part Number: MTZJT-7712B
• Description: DIODE ZENER 12V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-7712B

• Package / Case: DO-204AG, DO-34, Axial
• Voltage - Zener (nom) (vz): 12V
• Current - Reverse Leakage @ Vr: 200nA @ 9V
• Power - Max: 500mW
• Impedance (max) (zzt): 25 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C
• Zener Voltage Vz Typ: 12V
• Power Dissipation Max: 500mW
• Operating Temperature Range: -65°C To +175°C
• Diode Case Style: DO-34
• No. Of Pins: 2
• Svhc: No SVHC (18-Jun-2010)
• Termination: RoHS Compliant
• Zener Voltage: 11.735 V
• Voltage Tolerance: 3 %
• Zener Current: 20 mA
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.2 uA
• Maximum Zener Impedance: 25 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
0.001
0.01
11.9
11.8
11.7
11.6
11.5
100
10
0.1
10
12
1
1
0.1
10
Ta=25℃
Ta=-25℃
Zz-Iz CHARACTERISTICS
Vz-Iz CHARACTERISTICS
ZENER CURRENT(mA)
11
ZENER VOLTAGE:Vz(V)
Vz DISRESION MAP
AVE:11.69V
12
1
13
Ta=125℃
Ta=75℃
Ta=25℃
n=30pcs
Ta=175℃
IZ=5mA
10
14
10000
0.001
1000
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.01
100
0.1
1
0
10
1
0
1
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
2
IR DISRESION MAP
3
AVE:0.162nA
4
5
Ta=175℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
6
Ta=25℃
VR=9.0V
n=30pcs
7
8
9
1000
100
100
90
80
70
60
50
40
30
20
10
10
0
1
0
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2
Ct DISRESION MAP
3
AVE:50.30pF
4
Rev.D
5
MTZJ12B
6
7
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
8
9
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