BZV85-C10,113 NXP Semiconductors, BZV85-C10,113 Datasheet - Page 5

• Manufacturer Part Number: BZV85-C10,113
• Description: DIODE ZENER 10V 1.3W DO-41
• Manufacturer: NXP Semiconductors

Specifications of BZV85-C10,113

• Voltage - Zener (nom) (vz): 10V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (max) (zzt): 8 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 10 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 6.6 mV / K
• Power Dissipation: 1.3 W
• Maximum Reverse Leakage Current: 0.2 uA
• Maximum Zener Impedance: 8 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933500650113; BZV85-C10 T/R; BZV85-C10 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board with 1 cm
GRAPHICAL DATA
1999 May 11
handbook, full pagewidth
R
R
SYMBOL
Voltage regulator diodes
th j-tp
th j-a
R th j-tp
(K/W)
10
10
10
1
3
2
10
−2
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
10
−1
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
PARAMETER
1
2
copper area per lead.
5
10
lead length 4 mm; see Fig.2
lead length10 mm; note 1
CONDITIONS
10
2
t p
10
3
T
BZV85 series
VALUE
t p (ms)
110
175
Product data sheet
δ
=
t p
T
MBG929
10
4
UNIT
K/W
K/W