CY7C1051DV33-10ZSXI Cypress Semiconductor Corp, CY7C1051DV33-10ZSXI Datasheet

no-image

CY7C1051DV33-10ZSXI

Manufacturer Part Number
CY7C1051DV33-10ZSXI
Description
CY7C1051DV33-10ZSXI
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1051DV33-10ZSXI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Rohs Compliant
YES
Density
8Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
110mA
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1051DV33-10ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1051DV33-10ZSXIT
0
Company:
Part Number:
CY7C1051DV33-10ZSXIT
Quantity:
6 000
Cypress Semiconductor Corporation
Document #: 001-00063 Rev. *G
8-Mbit (512K x 16) Static RAM
Features
Notes
Logic Block Diagram
1. Automotive product information is preliminary.
2. For guidelines about SRAM system design, refer to the Cypress application note
Temperature ranges
High speed
Low active power
Low CMOS standby power
2.0-V data retention
Automatic power down when deselected
Transistor-transistor logic (TTL)-compatible inputs and
outputs
Easy memory expansion with CE and OE features
Available in Pb-free 48-ball fine ball grid array (FBGA) and
44-pin thin small outline package (TSOP) II packages
Industrial: –40 °C to 85 °C
Automotive-E: –40 °C to 125 °C
t
I
I
AA
CC
SB2
= 10 ns (Industrial)
= 110 mA at 10 ns (Industrial)
= 20 mA (Industrial)
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
[1]
198 Champion Court
INPUT BUFFER
512 K × 16
ARRAY
DECODER
COLUMN
8-Mbit (512 K × 16) Static RAM
Functional Description
The CY7C1051DV33
RAM organized as 512 K words by 16 bits.
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then
data from I/O pins (I/O
specified on the address pins (A
(BHE) is LOW, then data from I/O pins (I/O
into the location specified on the address pins (A
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte LOW Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O
Byte HIGH Enable (BHE) is LOW, then data from memory
appears on IO
complete description of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or a write operation (CE LOW,
and WE LOW) is in progress.
The CY7C1051DV33 is available in a 44-pin TSOP II package
with center power and ground (revolutionary) pinout and a
48-ball FBGA package.
AN1064, SRAM System Guidelines
San Jose
8
to IO
15
,
[2]
. See the
CA 95134-1709
is a high performance CMOS Static
0
–I/O
I/O
I/O
0
8
–I/O
available at
–I/O
7
BHE
WE
CE
OE
BLE
0
), is written into the location
–I/O
0
“Truth Table”
7
15
–A
Revised December 16, 2010
15
18
CY7C1051DV33
) are placed in a
). If Byte HIGH Enable
www.cypress.com.
8
–I/O
on page 9 for a
15
0
408-943-2600
–A
) is written
18
0
–I/O
).
7
. If
[+] Feedback

Related parts for CY7C1051DV33-10ZSXI

CY7C1051DV33-10ZSXI Summary of contents

Page 1

... HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH write operation (CE LOW, and WE LOW progress. The CY7C1051DV33 is available in a 44-pin TSOP II package with center power and ground (revolutionary) pinout and a 48-ball FBGA package. INPUT BUFFER 512 K × ...

Page 2

... Data Retention Waveform................................................ 5 AC Switching Characteristics ......................................... 6 Switching Waveforms ...................................................... 7 Read Cycle No. 1 ........................................................ 7 Read Cycle No. 2 (OE Controlled) .............................. 7 Write Cycle No. 1 (CE Controlled)............................... 8 Document #: 001-00063 Rev. *G CY7C1051DV33 Write Cycle No. 2 (BLE or BHE Controlled) ................ 8 Write Cycle No. 3 (WE Controlled, OE LOW) ............. 9 Truth Table ........................................................................ 9 Ordering Information...................................................... 10 Ordering Code Definitions ......................................... 10 Package Diagrams.......................................................... 11 Acronyms ...

Page 3

... Document #: 001-00063 Rev BLE I BHE I/O I I I/O I I/O I I/O I BHE BLE 6 I I I I/O I I/O I I/O I I/O I –10 (Industrial) –12 (Industrial) –15 (Automotive- 110 100 CY7C1051DV33 [ [3] [4] Unit 15 ns 120 Page [+] Feedback ...

Page 4

... IN Test Conditions T = 25 MHz 3 Test Conditions Still air, soldered × 4.5 inch, four-layer printed circuit board CY7C1051DV33 Ambient V Speed CC Temperature –40 C to +85 C 3.3 V  0 –40 C to +85 C 3.3 V  0 –40 C to +125 C 3.3 V  0.3 V ...

Page 5

... Conditions 2 > V – 0 > V – 0 < 0 DATA RETENTION MODE > (min) > 50 s or stable at V (min) > 50  CY7C1051DV33 Figure 3 (a). High-Z characteristics are tested for ALL INPUT PULSES 90% 90% 10% Fall Time: 1 V/ns (b) Min Max Unit 2.0 – V – – – 3.0 V ...

Page 6

... CC “AC Test Loads and Waveforms” is less than less than less than t LZCE HZOE LZOE HZBE and t HZWE CY7C1051DV33 [1] –15 (Auto-E) Unit Max Min Max s – 100 – – 15 – – ...

Page 7

... BHE, BLE, or both = HIGH for Read cycle. 17. Address valid before or coincident with CE transition LOW. Document #: 001-00063 Rev. *G [15, 16] Figure 4. Read Cycle No OHA [16, 17] Figure 5. Read Cycle No DATA VALID 50 CY7C1051DV33 DATA VALID t HZOE t HZCE t HZBE HIGH IMPEDANCE ICC CC 50% I ISB SB Page [+] Feedback ...

Page 8

... WE CE DATA I/O Notes 18. Data I/O is high-impedance if OE, or BHE, BLE, or both = V 19 goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 001-00063 Rev. *G [18, 19] Figure 6. Write Cycle No SCE PWE Figure 7. Write Cycle No PWE t SCE CY7C1051DV33 Page [+] Feedback ...

Page 9

... Power Down Data Out Read All Bits High-Z Read Lower Bits Only Data Out Read Upper Bits Only Data In Write All Bits High-Z Write Lower Bits Only Data In Write Upper Bits Only High-Z Selected, Outputs Disabled CY7C1051DV33 LZWE Mode Power Standby ( Active ( ...

Page 10

... To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed Ordering Code (ns) 10 CY7C1051DV33-10BAXI CY7C1051DV33-10ZSXI 12 CY7C1051DV33-12BAXI CY7C1051DV33-12ZSXI 15 CY7C1051DV33-15ZSXE Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY ...

Page 11

... Package Diagrams Figure 9. 48-Ball FBGA ( 1.2 mm), 51-85193 TOP VIEW A1 CORNER 6.00±0.10 B SEATING PLANE C Note 20. Automotive product information is preliminary. Document #: 001-00063 Rev. *G CY7C1051DV33 BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø0.30±0.05(48X 1.875 A 0.75 3.75 6.00±0.10 B 0.15(4X) REFERENCE JEDEC MO-207 51-85193-*B Page ...

Page 12

... DIMENSION IN MM (INCH) MAX MIN. Document #: 001-00063 Rev. *G PIN 1 I. BASE PLANE 0.10 (.004) 0°-5° SEATING PLANE CY7C1051DV33 EJECTOR MARK (OPTIONAL) CAN BE LOCATED BOTTOM VIEW ANYWHERE IN THE BOTTOM PKG 10.262 (0.404) 10.058 (0.396) ...

Page 13

... I/O Input/output OE output enable SRAM Static random access memory SOJ Small Outline J-Lead TSOP Thin Small Outline Package VFBGA Very Fine-Pitch Ball Grid Array Document #: 001-00063 Rev. *G CY7C1051DV33 Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA microamperes mA milliamperes ...

Page 14

... Document History Page Document Title: CY7C1051DV33, 8-Mbit (512 K × 16) Static RAM Document Number: 001-00063 Orig. of REV. ECN NO. Issue Date Change ** 342195 See ECN *A 380574 See ECN *B 485796 See ECN *C 866000 See ECN *D 1513285 See ECN VKN/AESA Converted from preliminary to final *E 2911009 ...

Page 15

... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-00063 Rev. *G All products and company names mentioned in this document may be the trademarks of their respective holders. cypress.com/go/plc Revised December 16, 2010 CY7C1051DV33 PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 ...

Related keywords