CY7C1021D-10ZSXIT Cypress Semiconductor Corp, CY7C1021D-10ZSXIT Datasheet - Page 7

• Manufacturer Part Number: CY7C1021D-10ZSXIT
• Description: CY7C1021D-10ZSXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021D-10ZSXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Memory Configuration: 64K X 16
• Access Time: 10ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Switching Waveforms
Document #: 38-05462 Rev. *J
V
I
t
t
Notes
CCDR
CDR
R
10. V
11. Full device operation requires linear V
12. Device is continuously selected. OE, CE, BHE and/or BLE = V
13. WE is HIGH for read cycle.
Parameter
DR
[11]
DATA OUT
ADDRESS
[10]
IL
(min) = –2.0 V and V
V
CE
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
for Data Retention
IH
(max) = V
PREVIOUS DATA VALID
Figure 3. Read Cycle No. 1 (Address Transition Controlled)
Description
CC
+ 1 V for pulse durations of less than 5 ns.
CC
ramp from V
t
OHA
t
CDR
4.5 V
DR
to V
t
AA
IL
CC(min)
.
V
V
> 50 s or stable at V
IN
CC
> V
DATA RETENTION MODE
= V
CC
DR
– 0.3 V or V
t
RC
= 2.0 V, CE > V
RC
V
DR
Conditions
>
2 V
CC(min)
IN
< 0.3 V
> 50 s.
CC
– 0.3 V,
[12, 13]
DATA VALID
4.5 V
t
R
Min
2.0
t
RC
–
0
CY7C1021D
Max
–
3
–
–
Page 7 of 16
Unit
mA
ns
ns
V
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