DS26C31MJ/883 National Semiconductor, DS26C31MJ/883 Datasheet - Page 2

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DS26C31MJ/883

Manufacturer Part Number
DS26C31MJ/883
Description
IC,LINE DRIVER,4 DRIVER,CMOS,DIP,16PIN,CERAMIC
Manufacturer
National Semiconductor
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V
V
V
V
V
|V
V
|V
I
I
I
I
IN
CC
OZ
SC
V
IH
IL
OH
OL
T
OS
DC Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
DC Input Voltage (V
DC Output Voltage (V
Clamp Diode Current (I
DC Output Current, per pin (I
DC V
Storage Temperature Range (T
T
OS
CC
| − |V
Symbol
per pin (I
− V
= 5V
CC
T
OS
|
or GND Current,
±
|
CC
10% (unless otherwise specified) (Note 4)
)
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output
Voltage
Differential Output
Voltage
Difference In
Differential Output
Common Mode
Output Voltage
Difference In
Common Mode Output
Input Current
Quiescent Supply
Current (Note 6)
TRI-STATE Output
Leakage Current
Output Short
Circuit Current
CC
IN
)
)
OUT
IK
, I
Parameter
)
OK
OUT
)
STG
)
)
−1.5V to V
−65˚C to +150˚C
−0.5V to 7.0V
(Notes 1, 2)
−0.5V to 7V
V
I
V
I
R
(Note 5)
R
(Note 5)
R
(Note 5)
R
(Note 5)
V
DS26C31T
I
DS26C31M
I
V
ENABLE = V
ENABLE = V
V
(Notes 5, 7)
OUT
OUT
OUT
OUT
IN
IN
IN
OUT
IN
L
L
L
L
CC
±
±
= 100
= 100
= 100
= 100
±
150 mA
150 mA
= V
= V
= V
= V
= −20 mA
= 20 mA
= 0 µA
= 0 µA
20 mA
+1.5V
= V
IH
IH
CC
CC
CC
or V
or V
, GND, V
or GND
or GND
IL
IH
2
Conditions
IL
IL
,
,
V
V
(Note 6)
V
V
(Note 6)
Lead Temperature (T
Operating Conditions
Supply Voltage (V
DC Input or Output Voltage
Operating Temperature Range (T
Input Rise or Fall Times (t
Max. Power Dissipation (P
This device does not meet 2000V ESD Rating. (Note 13)
IN
IN
IN
IN
IH
Ceramic “J” Pkg.
Plastic “N” Pkg.
SOIC “M” Pkg.
Ceramic “W” Pkg.
Ceramic “E” Pkg.
(Soldering, 4 sec.)
(V
DS26C31T
DS26C31M
, or V
= V
= 2.4V or 0.5V
= V
= 2.4V or 0.5V
IN
, V
CC
CC
IL
OUT
or GND
or GND
)
CC
)
L
)
Min
−30
2.0
2.5
2.0
r
, t
D
)
f
)
@
25˚C (Note 3)
A
)
±
Typ
200
200
3.4
0.3
3.1
1.8
0.8
0.8
0.5
4.50
Min
−40
−55
0
−150
±
±
Max
500
500
0.8
0.5
0.4
3.0
0.4
2.0
2.1
1.0
5.0
+125
Max
5.50
V
+85
500
CC
2419 mW
1736 mW
1226 mW
2134 mW
1182 mW
260˚C
Units
Units
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
˚C
˚C
ns
V
V

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