K4S281632F-UC75 SAMSUNG, K4S281632F-UC75 Datasheet - Page 5

• Manufacturer Part Number: K4S281632F-UC75
• Description: SEMICONDUCTOR, U=UNLEADED
• Manufacturer: SAMSUNG

K4S281633D-RL(N)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note :
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
D Q
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
0
~ DQ
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
Parameter
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
15
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.3V AC. The overshoot voltage duration is
Parameter
D D
supply relative to Vss
Pin
(V
V
DD
IN
= 3.0V, T
V
DDQ
V
OUT
.
A
= 23 C, f = 1MHz, V
Symbol
V
V
DDQ.
V
V
V
V
V
I
DDQ
D D
O H
OL
LI
I H
IL
Symbol
C
C
C
V
V
C
Symbol
ADD
OUT
DD
CLK
I N
IN
T
Min
-0.3
2.7
2.7
2.2
2.4
-10
, V
I
, V
P
STG
OS
-
REF
D
OUT
DDQ
SS
=0.9V
= 0V, T
3ns.
3ns.
A
50 mV)
Min
2.0
2.0
2.0
3.5
=-25 C ~ 70 C (Commercial), -25 C ~ 85 C (Extended))
Typ
3.0
3.0
3.0
0
-
-
-
V
DDQ
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
Max
3.6
3.6
0.5
0.4
10
4.0
4.0
4.0
6.0
Value
-
+0.3
50
1
Unit
uA
V
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
Rev. 0.6 Nov. 2001
Preliminary
I
I
O H
OL
Unit
mA
W
V
V
Note
C
= -2mA
= 2mA
Note
1
2
3