BZX84-A15,215 NXP Semiconductors, BZX84-A15,215 Datasheet - Page 8
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BZX84-A15,215
Manufacturer Part Number
BZX84-A15,215
Description
DIODE VREG 15V 250MW SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BZX84-C3V3215.pdf
(11 pages)
Specifications of BZX84-A15,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Zener (nom) (vz)
15V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 10.5V
Tolerance
±1%
Power - Max
250mW
Impedance (max) (zzt)
30 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
15 V
Voltage Tolerance
1 %
Voltage Temperature Coefficient
11.4 mV / K
Power Dissipation
250 mW
Maximum Reverse Leakage Current
50 nA
Maximum Zener Impedance
30 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934015880215
NXP Semiconductors
GRAPHICAL DATA
2003 Apr 10
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
(1) T
(2) T
Fig.2
BZX84-A/B/C2V4 to A/B/C4V3.
T
Fig.4
P ZSM
j
S Z
(W)
= 25 to 150 °C.
10
10
10
−1
−2
−3
j
j
1
10
0
3
2
= 25 °C (prior to surge).
= 150 °C (prior to surge).
0
−1
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Temperature coefficient as a function of
working current; typical values.
20
1
(1)
(2)
4V3
duration (ms)
40
3V9
2V4
2V7
I Z (mA)
3V3
3V6
MBG801
MBG783
3V0
10
60
8
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.3
BZX84-A/B/C4V7 to A/B/C12.
T
Fig.5
j
j
S Z
(mA)
= 25 °C.
= 25 to 150 °C.
I F
300
200
100
10
−5
0
5
0
0.6
0
Forward current as a function of forward
voltage; typical values.
Temperature coefficient as a function of
working current; typical values.
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
12
BZX84 series
6V2
5V6
5V1
4V7
V F (V)
Product data sheet
16
I Z (mA)
MBG781
MBG782
20
1