BZV49-C15,115 NXP Semiconductors, BZV49-C15,115 Datasheet - Page 4

• Manufacturer Part Number: BZV49-C15,115
• Description: DIODE ZENER 15V 1W SOT89
• Manufacturer: NXP Semiconductors

Specifications of BZV49-C15,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Voltage - Zener (nom) (vz): 15V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (max) (zzt): 30 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 14.7 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 11.4 mV / K
• Power Dissipation: 1 W
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 30 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933606000115; BZV49-C15 T/R; BZV49-C15 T/R

Per type
T
BZV49-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
CXXX
= 25 °C unless otherwise specified.
MIN.
10.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11.4
WORKING
VOLTAGE
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
at I
V
Z
Ztest
(V)
MAX.
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
TYP.
DIFFERENTIAL
70
75
80
85
85
85
80
50
40
15
10
10
10
10
10
10
15
20
25
RESISTANCE
6
6
6
6
6
8
at I
r
dif
Ztest
(Ω)
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
10.4
12.4
14.4
16.4
18.4
see Figs 4 and 5
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
TEMP. COEFF.
S
Z
at I
TYP. MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
+1.2
12.4
14.4
16.4
18.4
20.4
(mV/K)
11.4
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
Ztest
+0.2
+1.2
+2.5
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
0
0
0
0
0
0
0
3.7
4.5
5.3
6.2
7.0
8.0
9.0
CURRENT
I
Ztest
TEST
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(mA)
DIODE CAP.
at f = 1 MHz;
at V
C
MAX.
d
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
R
90
85
85
80
75
75
70
60
60
55
(pF)
= 0 V
I
CURRENT at
R
MAX.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
REVERSE
REVERSE
VOLTAGE
(μA)
10.5
11.2
12.6
14.0
15.4
16.8
(V)
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
R
NON-REPETITIVE PEAK
REVERSE CURRENT
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
at t
T
amb
I
p
ZSM
MAX.
= 100 μs;
= 25 °C
(A)