AD8221ARMZ-RL Analog Devices Inc, AD8221ARMZ-RL Datasheet - Page 22

• Manufacturer Part Number: AD8221ARMZ-RL
• Description: IC,Instrumentation Amplifier,SINGLE,TSSOP,8PIN,PLASTIC
• Manufacturer: Analog Devices Inc

Specifications of AD8221ARMZ-RL

• Design Resources: Low Cost, High Voltage, Programmable Gain Instrumentation Amplifier Using AD5292 and AD8221 (CN0114) Low Cost Programmable Gain Instrumentation Amplifier Circuit Using ADG1611 and AD620 (CN0146)
• Amplifier Type: Instrumentation
• Number Of Circuits: 1
• Slew Rate: 2 V/µs
• -3db Bandwidth: 825kHz
• Current - Input Bias: 500pA
• Voltage - Input Offset: 60µV
• Current - Supply: 900µA
• Current - Output / Channel: 18mA
• Voltage - Supply, Single/dual (±): 4.6 V ~ 36 V, ±2.3 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Gain Bandwidth Product: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AD8221
DIE INFORMATION
Die size: 1575 μm × 2230 μm
Die thickness: 381 μm
To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, R
Pad 2A and Pad 2B in parallel to one end of R
where R
Table 7. Bond Pad Information
Pad No.
1
2A
2B
3A
3B
4
5
6
7
8
1
The pad coordinates indicate the center of each pad, referenced to the center of the die. The die orientation is indicated by the logo, as shown in Figure 53.
G
is not required, Pad 2A and Pad 2B must be bonded together as well as the Pad 3A and Pad 3B.
Mnemonic
−IN
R
R
R
R
+IN
−V
REF
V
+V
G
G
G
G
OUT
S
S
X (μm)
–379
–446
–615
–619
–490
–621
+635
+649
+612
+636
G
and Pad 3A and Pad 3B in parallel to the other end of R
LOGO
Figure 53. Bond Pad Diagram
Rev. C | Page 22 of 24
3A
2B
4
3B
2A
1
7
5
8
6
Pad Coordinates
Y (μm)
+951
+826
+474
+211
–190
–622
–823
–339
+84
+570
1
G
. For unity gain applications
G
, by connecting