ADG333ABR-REEL Analog Devices Inc, ADG333ABR-REEL Datasheet - Page 4

• Manufacturer Part Number: ADG333ABR-REEL
• Description: IC,ANALOG SWITCH,QUAD,SPDT,CMOS,SOP,20PIN,PLASTIC
• Manufacturer: Analog Devices Inc

Specifications of ADG333ABR-REEL

• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 4 x SPDT
• On-state Resistance: 45 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 12V
• Current - Supply: 0.01µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.300", 7.50mm Width)

ADG333A
SINGLE SUPPLY
V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature range is as follows: B Version: −40°C to +85°C.
Guaranteed by design; not subject to production test.
DD
Analog Signal Range
RON
Source OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
I
t
t
Break-Before-Make Delay, t
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
I
V
INL
DD
ON
OFF
S
D
DD
= +12 V, V
, C
(OFF)
or I
S
(ON)
INH
SS
= 0 V ± 10%, GND = 0 V, unless otherwise noted.
INL
S
INH
D
(OFF)
, I
S
(ON)
2
OPEN
+25°C
35
±0.1
±0.25
±0.1
±0.4
110
100
10
5
72
85
12
25
0.05
0.25
−40°C to +85°C
0 V to V
75
±3
±5
2.4
0.8
±0.005
±0.5
200
180
0.35
±3/±30
DD
Rev. A | Page 4 of 12
1
ns max
ns max
mA max
Unit
V
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
ns typ
ns typ
ns min
ns min
pC typ
dB typ
dB typ
pF typ
pF typ
mA typ
V min/V max
Test Conditions/Comments
V
V
V
Figure 15
V
Figure 16
V
R
V
R
V
R
V
V
V
R
V
R
V
V
Digital inputs = 0 V or 5 V
D
DD
D
S
IN
L
S
L
S
L
S
D
DD
L
S
L
S
DD
= V
= 300 Ω, C
= 8 V; Figure 17
= 300 Ω, C
= 8 V; Figure 17
= 300 Ω, C
= 5 V; Figure 18
= 75 Ω, C
= 1.15 V rms; Figure 20
= 75 Ω, C
= 1.15 V rms; Figure 21
= 1 V, 10 V, I
= 12.2 V/1 V, V
= 6 V, R
= 0 V or V
= 13.2 V
= 12 V, V
= 13.5 V
D
= 12.2 V/1 V
D
= 0 W, C
L
L
SS
DD
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
= 35 pF;
= 35 pF;
= 35 pF;
= 0 V; Figure 19
S
= –1 mA
S
= 1 V/12.2 V
L
= 10 nF;