BZX84C16LT1G ON Semiconductor, BZX84C16LT1G Datasheet - Page 3
![DIODE ZENER 16V 225MW SOT-23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BZX84C16LT1G
Manufacturer Part Number
BZX84C16LT1G
Description
DIODE ZENER 16V 225MW SOT-23
Manufacturer
ON Semiconductor
Type
Voltage Regulatorr
Specifications of BZX84C16LT1G
Voltage - Zener (nom) (vz)
16V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 11.2V
Power - Max
225mW
Impedance (max) (zzt)
40 Ohm
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Operating Temperature
-65°C ~ 150°C
Number Of Elements
Single
Package Type
SOT-23
Zener Voltage (typ)
16V
Zener Test Current
5mA
Voltage Tolerance
6%
Power Dissipation
300mW
Knee Impedance
40Ohm
Operating Temperature Classification
Military
Rev Curr
50nA
Mounting
Surface Mount
Pin Count
3
Operating Temp Range
-65C to 150C
Zener Voltage
16 V
Voltage Temperature Coefficient
12.2 mV / K
Zener Current
10 mA
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
40 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Capacitance, Junction
105 pF
Current, Forward
10 mA
Current, Reverse
5 mA
Primary Type
Zener
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
0.9 V
Voltage, Reverse
16 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
Lead Free Status / Rohs Status
Compliant
Other names
BZX84C16LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BZX84C16LT1G
Manufacturer:
ON Semiconductor
Quantity:
50 474
Company:
Part Number:
BZX84C16LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
BZX84C16LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
BZX84C16LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BZX84C16LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Zener voltage is measured with a pulse test current I
* The “G” suffix indicates Pb-Free package available.
ELECTRICAL CHARACTERISTICS - BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1‐Anode, 2‐No Connection, 3‐Cathode) (T
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
BZX84C2V4LT1, G
BZX84C2V7LT1, G
BZX84C3V0LT1, G
BZX84C3V3LT1, G
BZX84C3V6LT1, G
BZX84C3V9LT1, G
BZX84C4V3LT1, G
BZX84C4V7LT1, G
BZX84C5V1LT1, G
BZX84C5V6LT1, G
BZX84C6V2LT1, G
BZX84C6V8LT1, G
BZX84C7V5LT1, G
BZX84C8V2LT1, G
BZX84C9V1LT1, G
BZX84C10LT1, G
BZX84C11LT1, G
BZX84C12LT1, G
BZX84C13LT1, G
BZX84C15LT1, G
BZX84C16LT1, G
BZX84C18LT1, G
BZX84C20LT1, G
BZX84C22LT1, G
BZX84C24LT1, G
BZX84C27LT1, G
BZX84C30LT1, G
BZX84C33LT1, G
BZX84C36LT1, G
BZX84C39LT1, G
BZX84C43LT1, G
BZX84C47LT1, G
BZX84C51LT1, G
BZX84C56LT1, G
BZX84C62LT1, G
BZX84C68LT1, G
BZX84C75LT1, G
Device*
Device
Marking
Marking
Device
Device
Y10
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Z11
Z12
Z13
Z14
Z15
Z16
Y11
W9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
Min
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.4
4.8
5.2
5.8
6.4
7.7
8.5
9.4
28
31
34
37
40
44
48
52
58
64
70
4
7
@ I
@ I
V
V
Z1
ZT1
(Note 3)
Z1
ZT1
Nom
Nom
2.4
2.7
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
(Volts)
10
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
11
Below
3
= 5 mA
= 2 mA
BZX84B4V7LT1, BZX84C2V4LT1 Series
Max
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
Max
28.9
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.4
6.6
7.2
7.9
8.7
9.6
32
35
38
41
46
50
54
60
66
72
79
5
6
@ I
@ I
Below
5 mA
2 mA
Z
Z
100
100
130
150
170
180
200
215
240
255
(W)
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
A
ZT1
ZT1
ZT1
ZT1
= 25°C unless otherwise noted, V
=
=
Z
at an ambient temperature of 25°C.
@ I
@ I
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Min
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
25
V
ZT2
(Note 3)
ZT2
Z2
V
Z2
Below
A
= 0.1 m‐
= 1 mA
(V)
Max
10.6
12.7
15.5
21.1
23.2
25.5
Max
28.9
11.6
2.1
2.4
2.7
2.9
3.3
3.5
4.7
5.3
6.6
7.2
7.9
8.7
9.6
14
17
19
32
35
38
41
46
50
54
60
66
72
79
4
6
3
@ I
@ I
0.5 mA
Below
1 mA
Z
Z
600
600
600
600
600
600
600
500
480
400
150
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
(W)
80
80
80
ZT2
ZT2
ZT2
ZT4
=
=
@ I
@ I
10.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Min
11.4
Min
2.6
3.3
3.6
3.9
4.1
4.4
4.5
5.2
5.8
6.4
7.7
8.5
9.4
V
3
5
7
ZT3
ZT3
(Note 3)
Z3
V
Z3
Below
= 20 mA
= 10 mA
F
(V)
= 0.90 V Max. @ I
Max
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
73.2
80.2
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.8
9.7
67
8
@ I
@ I
20 mA
10 mA
Below
Z
Z
100
120
130
140
(W)
110
50
50
50
40
40
30
30
15
15
10
10
10
10
15
20
20
20
20
25
25
45
50
55
60
70
80
90
ZT3
ZT3
ZT3
ZT3
6
6
6
6
8
=
=
mA
mA
Max Reverse
Max Reverse
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
I
I
0.7
0.5
0.2
0.1
0.1
0.1
R
R
50
20
10
F
5
5
3
3
3
2
1
3
2
1
Leakage
Leakage
Current
Current
= 10 mA)
@
@
Volts
10.5
11.2
12.6
15.4
16.8
18.9
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
V
14
V
(V)
21
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
R
R
@ I
@ I
(mV/k) Below
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Min
Min
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
ZT1
ZT1
(mV/k)
q
q
VZ
VZ
= 5 mA
= 2 mA
Max
-2.5
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
0
0
0
0
0
0
@ V
f = 1 MHz
@ V
f = 1 MHz
C (pF)
C (pF)
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
70
70
70
70
45
40
40
40
40
35
35
35
R
R
= 0
= 0