ADN2526ACPZ Analog Devices Inc, ADN2526ACPZ Datasheet - Page 11

• Manufacturer Part Number: ADN2526ACPZ
• Description: 10G 25 Ohm Diff Active Backmatch Laser
• Manufacturer: Analog Devices Inc
• Type: Laser Diode Driverr

Specifications of ADN2526ACPZ

• Data Rate: 11.3Gbps
• Number Of Channels: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 46mA
• Current - Modulation: 80mA
• Current - Bias: 100mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-VFQFN, CSP Exposed Pad
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The recommended configuration for BSET, IBIAS, and IBMON
is shown in Figure 23.
The circuit used to drive the BSET voltage must be able to drive
the 1 kΩ input resistance of the BSET pin. For proper operation
of the bias current source, the voltage at the IBIAS pin must be
between the compliance voltage specifications for this pin over
supply, temperature, and bias current range (see Table 1). The
maximum compliance voltage is specified for only two bias
current levels (10 mA and 100 mA), but it can be calculated for
any bias current by
See the Applications Information section for examples of
headroom calculations.
The function of the inductor, L, is to isolate the capacitance of
the IBIAS output from the high frequency signal path. For
recommended components, see Table 7.
AUTOMATIC LASER SHUTDOWN (ALS)
The ALS pin is a digital input that enables/disables both the bias
and modulation currents, depending on the logic state applied,
as shown in Table 5.
Figure 23. Recommended Configuration for the BSET, IBIAS, and IBMON Pins
V
COMPLIANCE_MAX
V
BSET
Figure 22. Equivalent Circuit of the IBMON Pin
Figure 21. Equivalent Circuit of the IBIAS Pin
VCC
(V) = VCC (V) − 0.75 − 4.4 × IBIAS
BSET
VCC
ADN2526
IBIAS
GND
VCC
2Ω
IBMON
100Ω
IBIAS
IBMON
TO LASER CATHODE
VCC
VCC
500Ω
100Ω
L
2kΩ
R
1kΩ
IBIAS
IBMON
Rev. A | Page 11 of 16
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Table 5. ALS Functions
ALS Logic State
High
Low
Floating
The ALS pin is compatible with 3.3 V CMOS and LVTTL logic
levels. Its equivalent circuit is shown in Figure 24.
MODULATION CURRENT
The modulation current can be controlled by applying a dc
voltage to the MSET pin. This voltage is converted into a dc
current by using a voltage-to-current converter using an
operational amplifier and a bipolar transistor, as shown in
Figure 25.
This dc current is switched by the data signal applied to the
input stage (DATAP and DATAN pins) and amplified by the
output stage to generate the differential modulation current at
the IMODP and IMODN pins.
The output stage also generates the active back-termination,
which provides proper transmission line termination. Active
back-termination uses feedback around an active circuit to
synthesize a broadband termination resistance. This provides
excellent transmission line termination, while dissipating less
power than a traditional resistor passive back-termination.
A small portion of the modulation current flows in the virtual
50 Ω active back-termination resistor. All of the preset IMOD
modulation current, the range specified in Table 1, flows into
the external load. The equivalent circuits for MSET, IMODP, and
IMODN are shown in Figure 26 and Figure 27. The two 25 Ω
resistors in Figure 27 are not actual resistors. They represent the
active back-termination resistance.
MSET
Figure 25. Generation of Modulation Current on the ADN2526
FROM INPUT STAGE
800Ω
200Ω
Figure 24. Equivalent Circuit of the ALS Pin
ALS
GND
VCC
VCC
40kΩ
100Ω
IBIAS and IMOD
Disabled
Enabled
Enabled
V
O
VCC
2kΩ
g
m
ADN2526
× V
50Ω
O
IMOD
ADN2526
IMODP
IMODN