AM29F016D-90EC Spansion Inc., AM29F016D-90EC Datasheet - Page 42

• Manufacturer Part Number: AM29F016D-90EC
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29F016D-90EC

• Memory Configuration: 2M X 8
• Ic Interface Type: Parallel
• Access Time: 90ns
• Memory Case Style: TSOP
• No. Of Pins: 48
• Mounting Type: Surface Mount
• Peak Reflow Compatible (260 C): No
• Supply Voltage Max: 5.5V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

REVISION SUMMARY
Revision A (May 1997)
Initial release of Am29F016B (0.35 µm) device.
Revision B (January 1998)
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision B+1 (January 1998)
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
Corrected title to indicate “sector group.”
Revision B+2 (April 1998)
Global
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to -90, -120,
and -150 speed options.
Operating Ranges
Added extended temperature range.
DC Characteristics, CMOS Compatible
Corrected the CE# and RESET# test conditions for
I
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for t
eters are 100% tested. Corrected the note reference for
t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
40
CC3
VCS
. This parameter is not 100% tested.
and I
CC4
to V
CC
WHWH1
±0.5 V.
VIDR
and t
. This parameter is not
WHWH2
. These param-
D A T A
Am29F016D
S H E E T
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
DC Characteristics—CMOS Compatible
I
I
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
specifications are tested with V
I
Revision C+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision C+2 (May 17, 1999)
Product Selector Guide
Corrected the t
tion to 55 ns.
Operating Ranges
V
+4.75 V to +5.25 V”.
Revision C+3 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision D (November 16, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E (May 19, 2000)
Global
Changed part number to Am29F016D. This reflects the
new 0.23 µm process technology upon which this de-
vice will now be built.
The Am29F016D is compatible with the previous 0.32
µm Am29F016B device, with the exception of the sec-
tor group protect and unprotect algorithms. These
algorithms are provided in a seperate document. Con-
tact AMD for more information or to request a copy of
that document.
CC3
CC4
CC1
CC3
CC
— Reliable operation for the life of the system
, I
, I
, I
Supply Voltages: Added “V
= 20 µA at extended temperature (>+85°C)”.
CC4
CC4
CC2
GHWL
: Added Note 4, “For CMOS mode only I
: Deleted V
, I
CC3
OE
and changed OE# waveform to start at
, I
CC4
specification for the -150 speed op-
CC
: Added Note 2 “Maximum I
= V
CC
21444E6 November 2, 2006
Max.
CC
CC
= V
for ± 5% devices .
CCmax
”.
CC3
CC
,