AM29F016D-90EI Spansion Inc., AM29F016D-90EI Datasheet - Page 38

Flash Memory IC

AM29F016D-90EI

Manufacturer Part Number
AM29F016D-90EI
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29F016D-90EI

Memory Size
16Mbit
Memory Configuration
2M X 8
Ic Interface Type
Parallel
Access Time
90ns
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Termination Type
SMD
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 6 for further
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
Parameter
CC
Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
information on command definitions.
C
C
C
Current
OUT
IN2
IN
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
A
= 25 C, f = 1.0 MHz.
Parameter Description
SS
CC
on I/O pins
. Test conditions: V
Typ (Note 1)
CC
14.4
32
= 4.5 V, 1,000,000 cycles.
1
7
CC
Am29F016D
= 5.0 Volt, one pin at a time.
V
V
V
IN
OUT
IN
Max (Note 2)
= 0
= 0
= 0
43.2
256
300
8
Test Conditions
Test Conditions
125 C
150 C
Unit
sec
sec
sec
µs
CC
, 1,000,000 cycles. Additionally,
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–100 mA
–1.0 V
Min
Min
10
20
Comments
Min
8.5
7.5
6
V
CC
+100 mA
Max
7.5
12
9
Max
Years
Years
+ 1.0 V
Unit
Unit
pF
pF
pF
37

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