AM29F080B-90SI Spansion Inc., AM29F080B-90SI Datasheet
AM29F080B-90SI
Specifications of AM29F080B-90SI
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AM29F080B-90SI Summary of contents
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... Am29F080B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary ...
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... DATA SHEET Am29F080B 8 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device ■ High performance — ...
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... GENERAL DESCRIPTION The Am29F080B Mbit, 5.0 volt-only Flash mem- ory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F080B is offered in 40-pin TSOP and 44-pin SO packages. This device is designed to be programmed in-system with the standard system 5.0 volt V supply. A 12.0 volt V CC quired for program or erase operations ...
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... Standby Mode .......................................................................... 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode ................................................................ 9 Table 1. Am29F080B Sector Address Table ...................................10 Autoselect Mode ..................................................................... 10 Table 2. Am29F080B Autoselect Codes (High Voltage Method) ....10 Sector Group Protection/Unprotection .................................... 11 Table 3. Sector Group Addresses ...................................................11 Temporary Sector Group Unprotect ....................................... 11 Figure 1. Temporary Sector Group Unprotect Operation ................11 Hardware Data Protection ...................................................... 12 Low V Write Inhibit ...
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... V ± - 5.0 V ± 10 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F080B Am29F080B -70 -90 -120 70 90 120 70 90 120 DQ0–DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix 21503G5 November 1, 2006 ...
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... A12 8 CE RESET# 12 A11 13 A10 RESET# A11 A10 DQ0 DQ1 DQ2 DQ3 November 1, 2006 21503G5 40-Pin Standard TSOP Am29F080B WE# 37 OE# 36 RY/BY# 35 DQ7 34 DQ6 33 DQ5 32 DQ4 DQ3 27 DQ2 26 DQ1 25 DQ0 CE# 42 A12 41 A13 40 A14 39 A15 38 A16 37 A17 36 A18 35 A19 WE# 29 OE# ...
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... Hardware Reset Pin, Active Low RY/BY# = Ready/Busy Output V = +5.0 V single power supply CC (see Product Selector Guide for device speed ratings and voltage supply tolerances Device Ground Pin Not Connected Internally LOGIC SYMBOL 20 A0–A19 CE# OE# WE# RESET# Am29F080B 8 DQ0–DQ7 RY/BY# 21503G5 November 1, 2006 ...
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... See Product Selector Guide and Valid Combinations DEVICE NUMBER/DESCRIPTION Am29F080B 8 Megabit ( 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 5.0 V Read, Program, and Erase Valid Combinations AM29F080B-55 EC, EI, ED, SC, SI, SD, SF AM29F080B-70 AM29F080B-90 EC, ED, EI, EF, EE, EK SC, SD, SI, AM29F080B-120 SF, SE, SK November 1, 2006 21503G5 ° ° + Commercial ° ° = ...
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... The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29F080B Device Bus Operations Operation Read Write TTL Standby ...
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... Refer to the AC Characteristics tables for RESET# pa- rameters and timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped ance state. Am29F080B , the device enters IL SS (during Embedded Algorithms). The (not during Embedded Algo- READY after the RE- RH ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector ad- Table 2. Am29F080B Autoselect Codes (High Voltage Method) Description CE# OE# Manufacturer ID: AMD L L ...
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... SA12 SA13 – SA14 SA15 Notes All protected sector groups unprotected. 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Am29F080B START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Group Unprotect Completed (Note 2) Operation ...
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... If DQ5 goes high during a program or erase operation, writing the reset command returns the device to read- ing array data (also applies during Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, Am29F080B is greater than LKO or WE ...
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... Any commands written to the chip during the Embed- ded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately ter- minates the operation. The Chip Erase command se- Am29F080B START Write Program Command Sequence Data Poll ...
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... The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program oper- ation. See “Write Operation Status” for more informa- tion. Am29F080B 21503G5 November 1, 2006 ...
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... Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29F080B Embedded Erase algorithm in progress Yes 15 ...
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... Command Definitions Table 4. Am29F080B Command Definitions Command First Sequence Addr Data (Note 1) Cycles Read (Note Reset (Note 4) 1 XXX Autoselect 4 555 Manufacturer ID Autoselect 4 555 Device ID Autoselect Sector Group 4 555 Protect Verify (Note 5) Byte Program 4 555 Chip Erase 6 555 Sector Erase 6 555 ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F080B Yes Yes PASS 17 ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F080B 21503G5 November 1, 2006 ...
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... Operation Not Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F080B Note 1 No (Notes Program/Erase Operation Complete 19 ...
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... See “DQ5: Exceeded Timing Limits” for more information Table 5. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F080B DQ2 RY/BY# DQ3 (Note 1) N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 21503G5 November 1, 2006 ...
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... V to +5. for± 10% devices . . . . . . . . . . . .+4 +5 Operating ranges define those limits between which the functionality of the device is guaranteed. November 1, 2006 21503G5 +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative to –2 0.5 V. During + 2 +2 +0.5 V 2.0 V Figure 7. Maximum Negative Am29F080B Overshoot Waveform Overshoot Waveform 21 ...
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... IL, IH ± 0 ± 0.5 V RESET ± 0.5 V RESET 5 mA Min –2.5 mA Min –100 µ Min CCmax Am29F080B Min Typ Max Unit ±1.0 µA 50 µA ±1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4.2 V ...
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... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F080B All -55 others Unit 1 TTL gate L 30 100 0.0– ...
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... Addresses CE# OE# WE# Outputs RESET# RY/BY Test Setup Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F080B Speed Options -55 -70 -90 -120 Unit Min 120 Max 120 Max 120 Max Min 0 Min 10 Max 20 20 ...
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... RY/BY# CE#, OE# RESET# November 1, 2006 21503G5 Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F080B All Speed Options Unit Max 20 µs Max 500 ns Min 500 ns Min 50 ns Min 20 µs Min ...
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... WE# to RY/BY# Valid BUSY Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Max Am29F080B Speed Options -55 -70 -90 -120 Unit 120 ...
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... Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Note:PA = program address program data, D November 1, 2006 21503G5 WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F080B Read Status Data (last two cycles WHWH1 Status D OUT ...
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... Data RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings 555h for chip erase WPH t DH 55h 30h 10 for Chip Erase t BUSY Am29F080B Read Status Data WHWH2 In Complete Progress t RB 21503G5 November 1, 2006 ...
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... Figure 14. Toggle Bit Timings (During Embedded Algorithms) November 1, 2006 21503G5 Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F080B VA High Z Valid Data True High Z Valid Data True VA VA Valid Status Valid Data (stops toggling) 29 ...
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... Figure 16. Temporary Sector Group Unprotect Timing Diagram Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F080B Erase Resume Erase Erase Complete Read All Speed Options Unit 500 ns 4 µ VIDR ...
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... WHWH2 Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. November 1, 2006 21503G5 Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Am29F080B Speed Option s -55 -70 -90 -120 Unit 120 ...
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... Figure 17. Alternate CE# Controlled Write Operation Timings for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F080B PA DQ7# D OUT = Array Data. OUT 21503G5 November 1, 2006 ...
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... V (4.75 for -55), 1,000,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150°C 125°C Am29F080B Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 ...
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... PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package Am29F080B Dwg rev AC; 10/99 21503G5 November 1, 2006 ...
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... PHYSICAL DIMENSIONS TS 040—40-Pin Standard Thin Small Outline Package November 1, 2006 21503G5 Am29F080B Dwg rev AA; 10/99 35 ...
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... Replaced figures with more detailed illustrations. . These param- Revision F+1 (May 18, 2000) DC Characteristics TTL/NMOS Compatible: The ICC2 specifications are now identical to those for CMOS compatible. Revision G (December 4, 2000) Added table of contents. Ordering Information Deleted burn-in option. Am29F080B = µA CC3 CC4 ” Added Note 2 “Maximum I CC4 = V ” ...
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... Deleted 150 ns speed option and reverse TSOP pack- CC age option. Revision G4 (May 19, 2006) Added “Not recommended for new designs” note. AC Characteristics Changed t specification to maximium value. BUSY Revision G5 (November 1, 2006) Deleted “Not recommended for new designs” note. Am29F080B 37 ...