CY14B101LA-BA45XI Cypress Semiconductor Corp, CY14B101LA-BA45XI Datasheet - Page 13

• Manufacturer Part Number: CY14B101LA-BA45XI
• Description: CY14B101LA-BA45XI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-BA45XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
Document #: 001-42879 Rev. *K
27. BHE and BLE are applicable for x16 configuration only.
28. If WE is low when CE goes low, the outputs remain in the high impedance state.
29. HSB must remain HIGH during Read and Write cycles.
30. CE or WE must be > V
Data Output
Data Output
Data Input
BHE, BLE
Data Input
BHE, BLE
Address
Address
WE
CE
WE
CE
IH
during address transitions..
Figure 10. SRAM Write Cycle #3: BHE and BLE Controlled
Figure 9. SRAM Write Cycle #2: CE Controlled
t
SA
t
SA
t
AW
t
PWE
t
SCE
t
High Impedance
BW
High Impedance
t
t
Address Valid
BW
PWE
t
SCE
Address Valid
t
t
SD
WC
t
Input Data Valid
WC
t
SD
Input Data Valid
t
HA
[27, 28, 29, 30]
t
t
HD
HD
t
HA
[27, 28, 29, 30]
CY14B101NA
CY14B101LA
Page 13 of 26
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