CY14B256LA-SZ25XIT Cypress Semiconductor Corp, CY14B256LA-SZ25XIT Datasheet - Page 12
CY14B256LA-SZ25XIT
Manufacturer Part Number
CY14B256LA-SZ25XIT
Description
CY14B256LA-SZ25XIT
Manufacturer
Cypress Semiconductor Corp
Specifications of CY14B256LA-SZ25XIT
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256LA-SZ25XIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Note
Document Number: 001-54707 Rev. *F
17. WE must be HIGH during SRAM read cycles.
18. HSB must remain HIGH during READ and WRITE cycles.
19. If WE is low when CE goes low, the outputs remain in the high impedance state.
20. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Data Output
Data Input
Address
Address
WE
CE
CE
OE
I
IH
CC
WE
CE
during address transitions.
High Impedance
Figure 6. SRAM Read Cycle #2: CE and OE Controlled
Standby
Figure 7. SRAM Write Cycle #1: WE Controlled
Figure 8. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
t
SA
PU
t
LZCE
t
LZOE
t
Address Valid
AA
High Impedance
t
t
ACE
AW
t
Address Valid
t
PWE
t
SCE
HZWE
Address Valid
t
t
SCE
DOE
t
t
PWE
RC
t
Active
WC
Input Data Valid
t
WC
t
SD
t
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[18, 19, 20]
[18, 19, 20]
t
t
HD
HD
t
HA
t
HA
[17, 18]
t
t
HZCE
HZOE
t
PD
CY14B256LA
Page 12 of 22
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