CY62147EV30LL-45B2XIT Cypress Semiconductor Corp, CY62147EV30LL-45B2XIT Datasheet - Page 9
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CY62147EV30LL-45B2XIT
Manufacturer Part Number
CY62147EV30LL-45B2XIT
Description
CY62147EV30LL-45B2XIT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY62147EV30LL-45ZSXI.pdf
(16 pages)
Specifications of CY62147EV30LL-45B2XIT
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (256K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62147EV30LL-45B2XIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 38-05440 Rev. *J
31. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
32. If CE goes HIGH simultaneously with WE = V
33. During this period, the I/Os are in output state. Do not apply input signals.
CE
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA I/O
DATA I/O
2
such that when CE
WE
WE
CE
CE
NOTE 33
1
NOTE 33
is LOW and CE
t
SA
Figure 11. Write Cycle No. 4: BHE/BLE Controlled, OE LOW
(continued)
t
SA
Figure 10. Write Cycle No. 3: WE Controlled, OE LOW
2
is HIGH, CE is LOW. For all other cases CE is HIGH.
IH
t
HZWE
, the output remains in a high impedance state.
t
HZWE
t
t
AW
AW
t
t
t
SCE
BW
SCE
t
PWE
t
t
WC
WC
t
PWE
t
BW
DATA
DATA
t
SD
t
SD
IN
IN
t
[31, 32]
HD
t
HD
t
CY62147EV30 MoBL
t
HA
t
HA
[31, 32]
LZWE
t
LZWE
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