CY62148ELL-45ZSXIT Cypress Semiconductor Corp, CY62148ELL-45ZSXIT Datasheet - Page 7

• Manufacturer Part Number: CY62148ELL-45ZSXIT
• Description: CY62148ELL-45ZSXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62148ELL-45ZSXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 38-05442 Rev. *H
19. Device is continuously selected. OE, CE = V
20. WE is HIGH for read cycles.
21. Address valid before or similar to CE transition LOW.
22. Data I/O is high impedance if OE = V
23. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
24. During this period, the I/Os are in output state and input signals must not be applied.
DATA OUT
CURRENT
ADDRESS
DATA OUT
ADDRESS
ADDRESS
SUPPLY
DATA I/O
V
CE
OE
CC
WE
OE
CE
NOTE 24
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 6. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
PU
IH
Figure 4. Read Cycle No. 1 (Address Transition Controlled)
t
LZCE
t
.
SA
t
HZOE
t
t
IL
ACE
LZOE
.
Figure 5. Read Cycle No. 2 (OE Controlled)
t
OHA
50%
t
DOE
t
AA
t
AW
t
t
SCE
RC
t
WC
t
RC
RC
t
t
PWE
DATA VALID
SD
DATA VALID
[20, 21]
[19, 20]
DATA VALID
t
t
HZOE
HA
t
HD
[22, 23]
t
HZCE
CY62148E MoBL
t
PD
50%
IMPEDANCE
HIGH
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I
I
CC
SB
®
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