CY62167DV30LL-55BVXIT Cypress Semiconductor Corp, CY62167DV30LL-55BVXIT Datasheet - Page 3

• Manufacturer Part Number: CY62167DV30LL-55BVXIT
• Description: CY62167DV30LL-55BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-55BVXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Density: 16Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 20b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
Product Portfolio
Pin Configuration
Document Number : 38-05328 Rev. *I
CY62167DV30LL
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
3. NC pins are not connected on the die.
4. DNU pins have to be left floating.
5. Ball H6 for the FBGA package can be used to upgrade to a 32M density.
6. The BYTE pin in the 48-TSOP I package has to be tied to V
SRAM by tying the BYTE signal to V
Product
Min
2.2
V
CC
SS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
DNU
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
. In the 2M x 8 configuration, Pin 45 is A20, while BHE, BLE and I/O8 to I/O14 pins are not used (DNU).
Range (V)
Typ
3.0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
[2]
48-Pin TSOP I (Forward) (1M x 16/ 2M x 8)
Figure 1. 48- ball VFBGA Top View
Max
I/O
3.6
BLE
V
V
I/O
I/O
I/O
A
SS
CC
1
18
CC
14
8
15
9
to use the device as a 1M X 16 SRAM. The 48-TSOPI package can also be used as a 2M X 8
BHE
I/O
I/O
I/O
I/O
OE
A
A
2
19
8
10
11
12
13
Speed
(ns)
55
70
DNU
Top View
A
A
A
A
A
A
A
3
17
14
12
5
9
0
3
A
A
A
A
A
A
A
A
4
15
13
10
1
4
7
16
6
Typ
2
f = 1MHz
I/O
[2]
CE
I/O
I/O
I/O
WE
A
A
5
11
2
3
4
1
5
1
Operating I
Vcc
Vss
DNU
CE
I/O
I/O
I/O
I/O
Max
6
0
2
6
4
[3, 4, 5]
2
7
D
E
G
H
A
B
C
F
[6]
Power Dissipation
CC
Typ
15
12
(mA)
f = f
[2]
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
CC
= V
CY62167DV30 MoBL
A16
BYTE
Vss
I/O15/A20
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE1
A0
Max
CC(typ.)
Max
30
25
, T
A
= 25 °C.
Standby I
Typ
2.5
[2]
SB2
Page 3 of 17
Max
22
(A)
