CY7C1019D-10VXIT Cypress Semiconductor Corp, CY7C1019D-10VXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1019D-10VXIT
• Description: CY7C1019D-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019D-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Notes
Document #: 38-05464 Rev. *F
C
C


3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
Parameter
Parameter
IN
OUT
JA
JC
shown in Figure (c).
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
OUTPUT
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[3]
Description
Description
[3]
Z = 50
(a)
1.5V
50 
[4]
High-Z characteristics:
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
A
INCLUDING
JIG AND
SCOPE
= 25C, f = 1 MHz, V
OUTPUT
30 pF*
5V
Test Conditions
Test Conditions
5 pF
(c)
CC
GND
3.0V
R1 480
Rise Time:
= 5.0V
255
3 ns
R2
10%
90%
ALL INPUT PULSES
Wide SOJ
400-Mil
56.29
38.14
(b)
Max
6
8
TSOP II
CY7C1019D
62.22
21.43
Fall Time:
90%
10%
Page 4 of 13
Unit
pF
pF
3 ns
C/W
C/W
Unit
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