CY7C1354C-166BZCT Cypress Semiconductor Corp, CY7C1354C-166BZCT Datasheet - Page 23
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CY7C1354C-166BZCT
Manufacturer Part Number
CY7C1354C-166BZCT
Description
CY7C1354C-166BZCT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1354C-166AXC.pdf
(32 pages)
Specifications of CY7C1354C-166BZCT
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1354C-166BZCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 38-05538 Rev. *L
28. For this waveform ZZ is tied low.
29. When CE is LOW, CE
30. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
WRITE
D(A1)
A1
1
1
is LOW, CE
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
2
is HIGH and CE
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
Figure 5. Read/Write Timing
t
3
DH
is LOW. When CE is HIGH, CE
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
UNDEFINED
is HIGH or CE
Q(A4+1)
BURST
READ
[28, 29, 30]
Q(A3)
6
t
DOH
t
OEHZ
2
WRITE
is LOW or CE
D(A5)
Q(A4)
A5
7
CY7C1354C, CY7C1356C
t
OEV
t
OELZ
3
Q(A6)
Q(A4+1)
READ
is HIGH.
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 23 of 32
10
Q(A6)
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